Numerical Simulation Study On Diffusion Of Harmful Substances In Etching Station Of An Integrated Circuit Enterprise

In recent years,with the rise of the electronic information industry and the deepening process of the Internet era,the electronic devices,such as mobile phones,tablet PCs and Internet communication equipments are increasing in demand.And the integrated circuits are used more and more widely.The production process of integrated circuit is complex,with the large number of harmful factors,the wide contact and the high toxicity.The entire production process involved in the gaseous,liquid,dust,non-ionizing radiation and ionizing radiation in various forms of harm.So the existence of the detrimental factors in the integrated circuit manufacturing enterprises is not to be overlooked.It's very meaningful to study its occupational hazards.In this paper,the writer selects the etching station of an actual integrated circuit manufacturing enterprise as an example.Taking the diffusion law of HF gas as the object of study,the influencing factors of it are analyzed by numerical simulation method.Firstly,the clean space of the etching station is simplified,and the abstract geometric model is established and meshed by Gambit software.Then,the geometric model is introduced into the computational fluid dynamics software Fluent.And the different parameters are used to simulate the diffusion of HF gas in the etching station under different working conditions.Finally,the corresponding occupational hazards are analyzed according to different diffusion conditions.The results show that the diffusion range of HF gas in the etching station of the integrated circuit manufacturing enterprise is about 50% of the calculation space under normal working conditions in a certain time.In addition,the number of air outlets,the number of exhaust vents,the location of the exhaust and the area of the outlet are the key factors in influencing the diffusion of HF gas in the clean room.First,compared to the two air outlets,the HF gas movement path is more complex,the diffusion range is greater in the clean space with one outlet,accounting for about 75% of the calculation space;second,when the cancellation of the internal air outlet in the reaction chamber(also can be regarded as exhaust failure),HF gas diffusion is the worst simulation of several times,with the complex movement path and the diffusion range almost taking up the entire computing space(100%);third,compared to the back-located exhaust,the gas flow path is more simple and the diffusion range is smaller,accounting for about 25% of the calculation space in the condition of up-located exhaust;Fourth,with the exhaust outlet area increased by two times,the diffusion of HF gas is the best in several simulations.The motion path is very regular and the diffusion range is less than 10% of the calculated space,which is one fifth of the range of normal operating conditions.So,it is proposed that the exhaust vent with a larger area is set on the top surface of the reaction chamber of the oxide film corrosion machine,so that the ventilation effect can be better guaranteed.In addition,relevant occupational health recommendations were made for the actual work in this case.