Research On High Power Photoconductive Semiconductor Switch

Photoconductive semiconductor switches(PCSS)have many advantages,such as low trigger jitter,high-speed response and high repetition rate.Especially,they are widely used in ultra high-speed electronics and high-power generation and reshaping.However,in the nonlinear mode,PCSS will be accompanied by the current filaments,and the electric field will lock several ten microseconds,this phenomenon will damage the substrate material of PCSS,and then have great influence on the service life and output power of PCSS.The first chapter of this thesis summarizes the research progress of the photoconductor semiconductor switch.It mainly analyzes the research status of the photoconductor switch at home and abroad,including theory,experiment,and application.In addition,it also explores the selection of substrate materials and the selection of electrode materials.Compare the various materials to find the best materials.Finally,the challenges faced by photoconductive switches are introduced.There is no unified and self-consistent theoretical model for the physical mechanism of high gain photoconductive switches.The second chapter mainly introduces the theoretical basis of the photoconductive switch physical model,including the carrier motion law,carrier drift,diffusion and recombination,and the linear mode characteristic of the photoconductive switch.Finally,a simple theoretical model is proposed.The third chapter mainly describes the use of the current continuity equation to establish the physical model of the photoconductive switch,and deduces a series of theoretical equations,constructs a simple theoretical basis,and finally uses MATLAB software programming and theoretical simulation;the simulation results will be obtained.Explain the explanation.The fourth chapter is mainly related to experiments on photoconductive switches,which are mainly divided into six parts.First,the test platform of photoconductive switches is restored,the selection and performance of laser diodes are reduced,and secondly,phosphorus is introduced.Indium and gallium arsenide photo-conductor switch gaps were tested and analyzed.It was concluded that the gap width of the photo-conductor switch played a decisive role in the maximum output power;and thirdly,the concentration of impurity carriers caused a change in the dark current of the photoconductive switch.Decisive factors;Fourth,research and analysis of fast response experiments of photoconductive switches;fifth,test and analysis of voltage conversion efficiency of photoconductive switches;sixth,analysis of experimental results of photoconductive switches of different substrate materials of indium phosphide and gallium arsenide.The fifth chapter mainly summarizes the thesis and the development of the later period.