Preparation Of Thermoelectric Thin Films And Device For Collecting Temperature Difference Energy

Since the beginning of the 21st century,with the development of global industrialization,the demand of human beings for energy has been continuously increasing.In the past 100 years,the consumption of industry was mainly fossil energy.Human beings are depleting the limited energy resources which was accumulated in the 500,000-year history of the earth,and conventional energy sources are already depleted.The demand for generators based on green,innovation has become an urgent task.Crucially,these new generators are self-sustaining rather than traditional energy sources to maintain their operation.The unique feature of thermoelectric technology is to reuse the wasted heat to generate electricity.The physical principle behind these materials is to use temperature gradients to generate currents,that is so-called Seebeck effect and the Peltier effect.Firstly,in this dissertation,pure-phase N-type antimony telluride and P-type antimony telluride thin-film thermoelectric materials were prepared by electrochemical deposition on ITO/Au by a method that was inexpensive,easy to operate,and mass-produced.Through the precise control of deposition potential,deposition time,and the concentration of plating solution to prepare a different thicknesses and different deposition speeds thermoelectric thin film.The crystal orientation,surface morphology,film thickness,surface roughness,electrical conductivity,and Seebeck coefficient of the films prepared under different conditions were studied.Finally,we obtained that when the potential is 1.3V and the deposition time is 120s,the properties of N-type antimony telluride thermoelectric films prepared by the method are better than those obtained by other potentials.The Seebeck coefficient and power factor are respectively 27.2.?V/K and 19.76?W/K2_*cm;When the potential is 1.3V and the deposition time is 120s,the performance of the prepared P-type antimony telluride thermoelectric film is better than that obtained by other potentials,the Seebeck coefficient and the power factor are respectively 28.54?V/K and 19.45?W/K2_*cm.Second,this paper combines traditional thermoelectric theory with MEMS technology to fabricate micro-MEMS thermoelectric devices.A new type of MEMS thermoelectric device is prepared using conventional materials,aluminum and N-type polysilicon,respectively,for N-type and P-type,mainly using plasma-enhanced chemical vapor deposition(PECVD)(main process),N-type polysilicon and metal aluminum at different temperature gradients.Under the potential difference can be generated.The fabricated MEMS thermoelectric device that is through package tested has a voltage of 0.137mV and an electric current of 0.023?A.