Preparation And Anti-reflection Properties Of Crystalline Silicon Light Trapping Structure

Light trapping structures on the surface of solar cell are very important, which improve the photoelectric conversion efficiency of solar cell. Three light trapping structures were prepared including monocrystalline silicon pyramid, silicon inverted pyramid and macro-porous silicon array. The effect of different conditions on three light trapping structures was studied. The relationship between the light trapping structure and its anti-reflective capability was analysed.In the experiment of preparing monocrystalline silicon pyramid structure, the effect of IPA concentration, temperature and time on the pyramid structure were studied. The best technological parameters were got: 2wt%NaOH, 12wt% IPA, corrode for 50 min at 80?constant temperature. Monocrystalline silicon pyramid structure with equality size, high coverage, ideal topography and high anti-reflective capability was obtained..In the process of preparing the inverted pyramid structure, the effect of temperature and time on inverted pyramid structure was investigated. By comparing the anti-reflective performance of different inverted pyramid structure, it was found that the inverted pyramid structure with the same size has the same anti-reflective capability of different arrangement.For the same area of the sample, the more proportion of inverted pyramid graphic area in the total area of the sample, the anti-reflective capability is better.The macro-porous silicon array structures were prepared by photoelectrochemical etching. The effect of the corrosion voltage and surfactant on macro-porous silicon array structure was studied. By comparing the anti-reflective performance of different macro-porous silicon array structure, it was found that the larger the porosity, the better anti-reflective capability for the same hole.