Preparation And Luminescent Properties Reseach On Indium Oxidenanomaterials

Indium Indium oxide?In₂O₃?Nanomaterials has become a research hotpotamong the wide band gap semiconductor Nanomaterials due to its advantages of wide band gap,good conductivity,low electron affinity,high breakdown electric field and better chemical stability.Indium oxide?In₂O₃?has a bright application prospects in optoelectronic devices,gas-sensitive materials,solar panels and display equipment,etc.In recent years,some progress has been made on the preparation and properties of indium oxide nanostructures.Researchers have prepared various kinds of nanostructures of indium oxide materials by a variety of physical and chemical methods and made corresponding progress in the field of luminescent properties of indium oxide nanostructures.However,there are still some problems about the preparation technology and the light-emitting mechanism.At the same time,the doping of indium oxide is also a hotspot in the present research.It is hoped that the properties of preparing indium oxide will be improved by doping different elements and different concentrations of indium oxide.In this thesis,the CVD method was used to find out the best preparation process parameters of preparingIn₂O₃nanowires by changing the process parameters.Meanwhile,Cu element doping was also carried out.Through the test and analysis of its microstructure and composition,and then the photoluminescence test,the process parameters and the luminescent properties affecting the indium oxide nanostructures were also analyzed.It provides a reference for the study of indium oxide.The main contents and innovations of this thesis are as follows:By chemical vapor deposition?CVD?method and properly controlling the process parameters in the preparation process,through comparative experiments,we analyze the effect of different process parameters on the growth morphology,and then deeply analyze and explain how the process parameters affect the growth morphology in the aspect of crystal growth.The diameter of indium oxide nanowires grown at 1150?for 2h is about 200 nm.The diameter of indium oxide nanowires grown at 200 sccm is much smaller than that of 100sccm and 150 sccm flow.The diameter of nano-wire is reduced to about 100 nm.The effect of catalyst,temperature,gas flow and other parameters on the growth morphology of indium oxide is analyzed from the crystal growth angle.We have successfully prepared In₂O₃nanoparticles,nanowires,At the same time Cu doped indium oxide nanowires were prepared.XPS results showed that the corresponding Cu 2p 3/2 and 2p 1/2 is 932.7ev and 952.4ev at the peak,the two peak is combined with Cu doped.Auger electron spectrum with a peak at570.4ev,through the literature comparison,it was Cu the peak of Cu is further illustrated in one form.After doping on Cu doped nano materials to improve the performance of the report that there are many,but the Cu doped indium oxide nanowires is rarely reported.The morphology and structure of In₂O₃ nanostructures were characterized by scanning electron microscopy?SEM?and transmission electron microscopy?TEM?.The composition and content of indium oxide nanostructured materials were measured by XRD,XPS,EDS etc.Through the photochemical testingof the product,we recognize that there are different luminescence peaks in different nanostructures.The photoluminescencepeak of the nanoparticles originates from the near-band edge and emits an ultraviolet emission peak at400 nm.The nanowires,grown without catalyst,not only have ultraviolet emission peaks at400 nm,but also have blue-green emission at 413 nm Peaks,which may be caused by surface defects during growth;In the growth process,nanowire structure will produce oxygen vacancies,surface defects,which will lead to the blue-green light at 423 nm and the light in the ultraviolet light-emitting area;In the Cu-doped In₂O₃ nanowires,more defects of oxygen vacancy occur due to the Cu element entering the crystal lattice,which leads to more defects and more luminescence peaks,including the ultraviolet light emission peak 400 nm,the blue-green light emission Peak 413 nm,423 nm and 445 nm.Annealing the sample under oxygen-rich conditions,the Cu-doped nanowires still have blue-green emission peaks at 423nm and 445 nm,which also show that the doping of Cu results in a new energy level of indium oxide.