MEMS Actuators Driven By Antiferroelectric Films

The electrically induced strain effect of the anti-ferroelectric thin film is produced in the electric field and its application in cantilever MEMS drive understood,the antiferroelectric film having a large displacement,fast response,low energy consumption and other advantages,which can significantly improve film driving performance MEMS drive and linear displacement can be achieved.In the present paper proposes a(Pb0.99Nb0.02)[(Zr0.85Sn0.13Ti0.02)]0.98O3(PNZST)driving an antiferroelectric film material antiferroelectric type MEMS to these characteristics anti-ferroelectric thin film film drive.The PNZST anti ferroelectric thin film preparation,research and analysis of the antiferroelectric material microstructure,electrical properties,static and dynamic characteristics,combined with the MEMS integrated production processing technology to complete the antiferroelectric type MEMS thin film actuator,and the dynamic performance of the MEMS thin film drive testing research analysis.First,RF magnetron sputtering(RF)was used to sputter LaNiO3(LNO)electrodes on the silicon substrate,and then the PNZST antiferroelectric thin films with different layers were prepared on the LNO/Si substrate by the sol-gel method(Sol-Gel)and characterized.The X ray diffractometer(XRD)showed that all the films showed(120)/(002)preferred orientation growth in the perovskite phase structure.Atomic force microscopy(AFM)shows that the surface roughness is about 30 nm,and the grain size is about 200 nm.The test results show that the PNZST anti ferroelectric antiferroelectric ferroelectric thin film typical double hysteresis effect graph,and then studied the charge reservoir thickness and ambient temperature on the PNZST anti ferroelectric thin film,ferroelectric antiferroelectric and dielectric properties,and provides technical support for the production of actuator type anti ferroelectric MEMS thin films drive.Through a combination of MEMS processing technology to complete the creation of the ferroelectric type MEMS thin film drive,for making circular parallel plate,fork finger film drive respectively tested frequency response characteristics of the center of the membrane displacement and the driving voltage and the relationship between the vibration displacement,results show that the movement is made of thin film drive nonlinear bistable.