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Structure And Thermoelectric Properties Of CuIn3Se5 Based Ternary Semiconductors

Posted on:2018-03-08Degree:MasterType:Thesis
Country:ChinaCandidate:Y F LuFull Text:PDF
GTID:2321330536466254Subject:Materials engineering
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Thermoelectic material is a type of new functional materials which can convert heat to electricity directly with the help of the internal carrier motion within solids.CuIn3Se5-based semiconductor is one of a non-cubic diamond-like compounds with chalcopyrite structure(space group:1-42d).Owing to its inherent Coulomb attraction between the charged InCu2+ and 2 Vcu-defect pairs which has a profound effect on the electronic and structural properties,the chalcopyrite has attracted much attention in thermoelectrics.In this work,we have synthesized the Te-substituted for Se CuIn3Se5-xTex(x=0,0.05,0.1,0.2,0.5)alloys by using powder metallurgy method along with spark plasmas intering(SPS)technique.Since the electronegativity of element Te(2.1 eV),which is a little higher than those of In(1.78 eV)and Cu(1.90 eV),is smaller than that of Se(2.55 eV),therefore,the substitution of Te for Se tends to elongate the bond lengths dCu-Se and dIn-Se,leading to the change of crystal structure parameters of u and η,which is directly related to lattice thermal conductivity(KL).In this work,we have observed that at x=0.1 the anion position displacement △u(u-0.25)equals to 0.15×10-3,at which the band gap and carrier concentration reach the highest and the crystal structure suffers distortion to a certain degree.At the same time,the material gives the minimum lattice thernal conductivity(kL),due to the strongest phonon scattering.We therefore conclude that the best thermoelectric performance can be achieved at a certain △u value,rather than at Au=0.The sample CuIn3Se5-xTex(x=0.1)gives the highest ZT value(0.4)at 930 K,which is about 2.6 times that of pristine CuIn3Se5(ZT=0.015 at 930 K).Based on the optimized CuIn3Se4.9Te0.1,we have also prepared Ag substituted Cu1-xAgxIn3Se4 9Te0.1(x=0.05,0.1,0.2,0.3)alloys for Cu.The measurement shows that the highest ZT value of 0.46 at 930 K was attained for the Cu1-xAgxIn3Se4.9Te0.1(x=0.2)alloy,which is about 3.1 times that of CuIn3Se5(930K,ZT=0.15).Na and Cl elements have substituted in Cu1-xNaxIn3Se5-xClx(x=0,0.05,0.1,0.2)alloys for Cu and Se simultaneously.The measurement shows that the highest ZT value of 0.38 at 930 K was attained for the Cu1-xNaxIn3Se5-xClx(x=0.1)alloy,which is about 2.54 times that of CuIn3Se5(930 K,ZT=0.15).
Keywords/Search Tags:Thermoelectric material, CuIn3Se5-based semiconductor with chalcopyrite structure, anion position displacement Δu, Lattice thermal conductivity
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