Synthesis Of Polysiloxane With Naphthaleneimide Accepter And Carbazole Or Terthienyl Donor Pendants And Their Memory Property

Silicon-based semiconductors have been the foundation of information technology for sixty years.With the development of information technology and the miniaturization of electronic equipment,the increase of storage density is more and more important.Our scientist have improved storage density successfully by develop many advanced technology to miniaturize structure of memory device.However,miniaturization of devices is facing a variety of physical limits today.It's necessary for us to find new ways to increase storage density.We have successfully synthesized PNDISi-alt-CzSi and PNDISi-alt-T₃Si in our research,they are polysiloxanes with naphthalimide imidazole accepter and terthiophene or carbazole donor pendants.The DSC and TG test indicated that the thermodynamic stability of PNDISi-alt-CzSi and PNDISi-alt-T₃Si are excellent.Atomic force microscopy photograph shown the surface morphology of PNDISi-alt-CzSi and PNDISi-alt-T₃Si film is good,the surface of films are uniform and smooth.We found the HOMO of PNDISi-alt-CzSi and PNDISi-alt-T₃Si are located in naphthalimide imidazole,the LUMO of these polysiloxanes are both located in terthiophene or carbazole donor by cyclic voltammetry.The results of molecular simulation were consistent with CV test.The memory devices ITO/PNDISi-alt-CzSi/Au and ITO/PNDISi-alt-T₃Si/Au both shown performance of ternary memory behavior.They can work steadily for a long time and the information writing speed is fast.