| Graphene is a flat sheet of carbon just one atom thick with the carbon atoms arranged in a honeycomb lattice.Graphene,as the thinnest two-dimensional material with just 0.334 nm at present,however,its excellent performance such as large specific surface area,ultra-high mechanical strength,unrivalled electrical and thermal properties make it develop fast in advanced electronic,optoelectronic devices and sensing applications.Chemical vapor deposition(CVD)is one way to prepare graphene,due to its simple and convenient operating process,easy to control film's layer and large growth area,CVD has always been the most attractive way of producing graphene films at present.The corresponding growth mechanism and process has fully developed.However,how to realize the industrialized graphene to grow in large scale and high quality under the atmospheric pressure is still the hotspot.At this stage the equipment to prepare graphene focus mostly on miniaturization CVD tube and the growth of graphene film also focus mostly on experiment,which greatly limit the large scale growth of film.In the later transferring process,etching the metal substrate is the most common way,which not only can bring the filaments but also can pollute the environment because of the heavy metals contamination.In this study,we discuss the process scheme of depositing graphene film on Cu by the industrialized tube under the atmospheric pressure and adopting the electrolytic method to transfer graphene film to the target substrate.Then we prepare the uniform and high quality graphene film on the basis of technology optimization.Finally,we still discuss the application of graphene film in metal protection.We combine two kinds of preparation methods,CVD and chemical oxidation-reduction to prepare graphene film on Cu,which significantly improve antioxidant activity of Cu substrate.The main results are as follows:1.In the process of preparing graphene film by CVD under atmosphere pressure,through controlling four factors,which are H2/Ar flux at growth stage,C2H2 flux,growth time and growth temperature,we get the optimum deposition technogical.Under the case of 1000/3000 sccm of H2/Ar flux,10 sccm of C2H2 flux,10 min of growth time and 1000? of growth temperature,we can prepare the graphene with high quality and few layer.2.The installed porous airflow pipe can significantly improve the uneven state in the growth of graphene in a large scale,acetylene through porous airflow pipe can evenly distribute to the deposition area of reaction chamber to improve the thickness uniformity of graphene film and within certain limits.3.Adopting the electrolytic method to transfer graphene film,through researching several factors that influence the separation effect,which indicate that graphene is easy to be separated from the substrate with short spin time,thick coating,high voltage and electrolyte concentration.4.Under the optimum deposition and transfer technology,we prepare the large scale and evenly graphene film with 93% transmittance,350?/? square resistance and 3 layer.5.In the application of graphene film in antioxidant activity,through adopting chemical oxidation-reduction,CVD and the combined way to prepare graphene film on Cu substrate,we separately study their influence on protecting Cu from oxidation.The results show that Cu surface form oxide after oxidation under the protection of r-GO and GP,respectively,and the oxidation rate of r-GO/Cu is greater than GP /Cu;Cu surface has no obvious oxidation after oxidizing under the protection of GP/r-GO.The oxidation resistance of GP/r-GO is the best. |
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