| Indium tin oxide (indium tin oxide,usually referred to as ITO) films have been always widely used in flat panel displays and other components .ITO films are prepared by ITO target by magnetron sputtering method. Therefore, preparation of ITO target with high performance is very critical. In this paper,the structure of ITO,and the preparation method of ITO thin film, ITO target and ITO powder was reviewed in this paper;ITO powder is synthesized by solvothermal method,its electrical property was investigated; The influence of ITO powder on ITO target was investigated.The optimization of ITO sintering process was also investigated,The effect of sintering additives Sb2O3 on ITO target was investigated,and the effect of double sintering additives Bi2O3 and Sb2O3on ITO targetwas also investigated .Conclusions: Using ethylene glycol and ethanol as mixed solvent,and the volume ratio is setted as 4:1, cubic ITO nanopowder of good dispersion with average particle size of 10.7nmwas prepared , and the I(400) /I (222) was 0.380, The relative density of ITO target prepared by ITO nanopowder synthesized by solvothermal method increased with the increase of particle size of ITO nanopowder , when the average particle size of ITO nanopowder was 10.7nm,the relative density of ITO target reached 99.25%, and the microstructure was densified,the porosity was few.The best preparation process parameters of ITO targetwere adding 1.5%PVA as binder, molding pressure 15MPa, cold isostatic pressure 400MPa.The relative density of ITO target increased first and then decreased with the increase of Sb2O3 content, when 1wt.%Sb2O3 is added in thespeciment,The highest relative density of ITO target got up to98.72%, the minimum resistivity 0.45m?·cm is also obtained. When the temperature got to 1400?,the molar ratio of Bi2O3:Sb2O3 was 1, the relative density was the highest 99.22%, and the sintering temperature of the ITO target was reduced by adding Bi2O3 and Sb2O3 sintering additive on the whole. |
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