| Zinc oxide is II-VI semiconductor materials. ZnO has a wide direct band gap of 3.37 eV and large exciton-binging energy of 60 meV at room temperature. Because of its superior performance in electrical, optical, mechanical and acoustic, etc., in the field of nano-materials research set off a boom. And the performance of ZnO nanorods material i s more excellent than the bulk material, a series has been continuously developed and developing novel optoelectronic devices from the material structure of ZnO nanorods.Solution approaches are appealing because of their low cost,simple equipment, and good potentials for scale-up. In this dissertation, ZnO nanorod arrays were synthesized on glass substrates that coated with different ZnO seed films by aqueous solution method. The morphologies and phase structures of the as-obtained samples were investigated by field-emission scanning electron microscopy(FE-SEM) and X-ray diffractometer(XRD). The orientation of the ZnO nanorod arrays is directly determined by the orientation of the ZnO seed films. Experimental results indicated that the diameter of Zn O nanorods varies with the ZnO seed films, concentration of reactants and growth time. The average diameter of Zn O nanorod arrays grown on the seeds by sol-gel method is larger than the arrays seeded with Zn O nanocrystals. Higher or lower reactant concentrations lead to the nonuniformity of nanorod arrays. In addition, the center part at the tip of the ZnO nanorods is etched in the reactants solution with the increasing growth time. The Zn O arrays with optimum process parameters consist of nanorods with average diameters of 90 nm and average lengths of 220 nm, separated by gaps of 90 nm. |