Study On Synthesis And Electronic Properties Of Si Doped In₂O₃（ZnO）₃ Superlattice Nanobelts

At present,one dimensional semiconductor nanomaterials are widely concerned due to its unique optical and electronic properties.ZnO as a kind of semiconductor material with high exciton binding energy(60 meV)and wide band gap(3.37eV)can acheive UV emission at room temperature or higher temperatures,so it is a kind of high performance light emitting materials.But the performance of pure ZnO can not keep on the development of optoelectronic devices.Therefore,it is necessary to study ZnO,In203(Zn0)m has unique optoelectronic properties which is similar with ZnO.In this paper,chemical vapor deposition(CVD)method was used to synthesis one-dimensional Si doped In203(Zn0)3(SIZO)nanobelts.The appearence of the belts were showed through scanning electron microscopy(SEM).According to EDX spectrum,the element ratio of In,Zn,O is cdose to ln2O3(ZnO)3.Form the HRTEM of the slice,alternating In/ZnO layer and In-O layer parallel to the surface of the superlattice nanobelts can be observed.The SDIZO nanobelt device was fabricated by mask method.The I-V properties were characterized by Agilent B1500A.The special I-V property of the SDIZO nanobelt is observed,revealing a nonlinear characteristic in a voltage range of-1.5 to 1.5 V.The nonlinear I-V property is likely related with the intrinsic energy band structure of superlattice nanobelts.In3+ and Zn2+ ions occupy trigonal bipyramidal and tetrahedral sites in the Si-doped InO(ZnO)m+ blocks randomly,which may lead to the change of electronic structure around the conduction band edge and formation of the statistical potential distribution.It is composed of the potential wells and barriers.For the SDIZO device,electron transports in the conductor band have to be tunneling through barriers at a low voltage,and then participate in conduction.So.the I-V curve is linear.However,the thermionic electron emission becomes dominant at a high voltage,which would result in nonlinear I-V characteristic.Doping Si also make carrier concentration of ln2O3(ZnO)3 nanobelts increased and electrical conductivity improved.