Study On Dielectric Properties And Defect Chemistry Of (Ba1-xLax)(Ti1-xLux)O3 Ceramics | Posted on:2018-04-23 | Degree:Master | Type:Thesis | Country:China | Candidate:T T Liu | Full Text:PDF | GTID:2311330515476021 | Subject:Inorganic Chemistry | Abstract/Summary: | PDF Full Text Request | Barium titanate(BaTiO3)is a simple compound,which is the most widely used material in the electronic ceramics industry with a room temperature permittivity of up to 1600,known as the “pillar of the electronic ceramics industry”.It was reported for rare-earth-doped BaTiO3 that with the contraction of ionic size of lanthanide ions,the site occupations of rare-earth ions in BaTiO3 gradually shift from the Ba sites to the Ba/Ti double sites simultaneously to the Ti sites.The double rare-earth doping can effectively reduce the dielectric loss(tan δ)and improve the dielectric permittivity(ε’)of BaTiO3 ceramics.The dielectric response tranfers from first-order phase transition(FPT)into diffuse phase transition(DPT).Lu3+(4f14)is a smallest rare-earth ion in lanthanides.It was reported that Lu is prone to occupy the Ti site in BaTiO3.In this work,Lu-doped BaTiO3 ceramics,La/Lu and Dy/Lu co-doped BaTiO3 ceramics were prepared at 1400 °C/12 h using cold-pressed ceramic preparation technology.X-ray diffraction(XRD),Raman spectroscopy,electron paramagnetic resonance(EPR),scanning electron microscopy(SEM)and dielectric-temperature characteristics were measured to investigate the solid solubility,crystal structure,site occupations,spectral properties,dielectric properties,and defect chemistry.The main results are as follows:1.The nominal(Ba1-xLux)Ti1-x/4O3(x = 0.01)ceramic(BLT)has a single-phase tetragonal structure,with an average grain size of 0.7 μm.The solid solubility of Lu in the BaTiO3 lattice is very low(x = 0.01).Lu3+ is prone to occupy the Ba site in the BaTiO3 lattice.A self-compensation mode and O vacancy defects cannot be formed.Two EPR signals can be detected.The signals at g = 1.974 and g = 2.004 are associated with Ba vacancies and Ti ones,respectively.The dielectric peak of BaTiO3 shifts to lower temperature at a shifting rate of-9 °C% Lu3+.BLT exhibits a high volume resistivity(ρ > 2.5 × 107 ?cm)and a low dielectric loss(tan δ < 0.05)below 110 °C,which reveals that the cation-vacancy compensation is dominant when Lu3+ occupis the Ba site in BaTiO3,and the electronic compensation cannot be induced.The single-phase BLT ceramic with x = 0.01 satisfies the Y5 V dielectric specification.2.The solid solubility of nominal(Ba1-x Lax)(Ti1-xLux)O3 ceramics(BLaTLu)is x = 0.05,which indicates that the co-doping with La and Lu in BaTiO3 can improve the solid solubility of Lu in the Ti site.During the sintering process,La3+ and Lu3+ ions enter the Ba sites and the Ti sites,respectively,forming LaBa-LuTi defect complexes,i.e.a self-compensation(donor-acceptor)mode.Moreover,a small number of Lu3+ ions are incorporated into the Ba sites to induce Ti vacancies(Ti""V).Lu3+ shows a weaker amphoteric behavior.The co-doping with La and Lu can suppress the grain growth of BaTiO3 ceramics,forming a fine-grained ceramic with an average grain size of GS = 0.9 1.0 μm.The relative density of BLaTLu decreases rapidly from 83 % to 72 %.Two signals at g = 1.974 and g = 2.004 are associated with Ba vacancies(VBa)and Ti ones(VTi),respectively,which originate from electron trapping in two kinds of intrinsic cation point defects.A Mn2+ sixtet signal is attributed to Mn impurities in ceramics.A rare signal at g = 2.2 is discussed associating with impurities in the initial materials.3.The BLaTLu ceramic with x = 0.05 satisfies the Y5 S dielectric specification,with a room-temperature dielectric permittivity of ε’RT = 1800.This ceramic exhibits the lowest dielectric loss(tan δ = 0.01),which is attributed to a nearly complete self-compensation mode of LaBa-LuTi.4.(Ba1-xDyx)(Ti1-xLux)O3 ceramics have a low solid solubility(x < 0.03)and it is not easy to form DyBa-LuTi defect complexes.However,the ceramic with x = 0.03 satisfies the Y5 T dielectric specification and exhibits a lower dielectric loss of tan δ = 0.019 at room temperature. | Keywords/Search Tags: | BaTiO3 ceramics, double rare-earth doping, defect chemistry, dielectric properties, electron paramagnetic resonance | PDF Full Text Request | Related items |
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