Study On Properties And Preparation Of AZO Transparent Conductive Films

At present,there are so many transparent conductive oxides?TCO?products in the market,such as SnO₂,In₂O₃,ITO?In₂O₃:Sn?,FTO?SnO₂:F?,AZO?ZnO:Al?et al.,and includes multicomponent films materials,for example,Zn SnO₃,Cd Sb₂O₅ and so on.ITO and FTO present excellent photoelectric properties and thermal stability,that was extensive applied in TCO field.However,the main composition of doping is element In that attach to rare metal.It have valuable production cost that is also principal reason to limit those applied range.AZO thin films have analogous photoelectric properties as ITO thin films,and is part of the environment-friendly materials,and supply fountainhead is also quite rich.And,it have high stability in H+ plasma environment that these advantages highlight the boarder space of development of AZO thin films.So,those research of AZO thin films have attracted more and more attention with domestic and foreign scholars.This experiment used magnetron sputtering method and chemical bath method to deposit AZO thin films,respectively.AZO thin films was deposited on soda-lime glass by magnetron sputtering method.The microscopic surface topography and photoelectric properties mechanism of substrate temperature,sputtering time and annealing temperature for AZO thin films were discussed.The chemical bath method is multistep synthesis process to fabricate ZnO array along seed via magnetron sputtering method.The microscopic surface topography,crystalline state and photoelectric properties mechanism of bath temperature and p H value and Al-doped concentration for AZO thin films were discussed.The experiment results show that AZO thin films deposited via magnetron sputtering method was influence from substrate temperature and sputtering time.Within the temperature and time limit,with the substrate temperature or sputtering time increasing,the transmittance and resistivity have coincident variation tendency,namely first rise and then drop.And,AZO thin films prepared by magnetron sputtering showed a hexagonal wurtzite structure,and grown along the orientations?002?.The results showed that under 200? substrate temperature and 90 min sputtering time AZO thin films had optimal photoelectric property.Moreover,the density of defect states could be improved by annealing treatment,and the surface of thin films turn into morn leveling,uniform and compact.The optimal annealing technological parameter is 400? insulated 2h.However,AZO thin films deposited via chemical bath method presented hexagonal columnar phase.Experimental results show that bath temperature play a key role in micromorphology of thin films with 90? critical point.AZO thin films consisted of sheet crystal flower with 500 nm under 85? bath temperature,however,shown columnar phase exceed 90? bath temperature.Meanwhile,p H value had remarkable influence for uniform and compact of thin films.Statistics indicate that the bath environment of weakly acidic?7.0>p H>6.0?in favour of depositing morn uniform and compact AZO thin films.