Influence Of Temperature On Morphologies And Structural Properties Of Gallium Oxide Nanomaterials

Quasi-one-dimensional material, its special physical and chemical properties and many potential applications of nano devices, optoelectronic devices, micro-sensors, nanotechnology has become a hot research. Aligned one-dimensional nanomaterials research is still in its preliminary stage at home and abroad, mainly in two aspects, such as how to use a simple and effective method for preparing one-dimensional nanomaterials, aligned one-dimensional basic properties of materials testing.Ga₂O₃,as a multifunctional semiconductor materials, magnetic, optical and semiconductor areas of concern, it has a band gap and high saturated electron drift speed, low dielectric constant, good thermal stability, high temperature performance, and many excellent performance,which becomes one of the preferred material for the next generation of semiconductor nanomaterials. In this paper, the one-dimensional ?-Ga₂O₃ nano materials is prepared by using thermal evaporation legal system. At different annealing temperatures, Ga simple substance and Au covered Si?1 1 1? substrate in a quartz tube nitrogen stream were annealed at different time to prepare ?-Ga₂O₃nano-materials, by scanning electron microscopy?SEM?, X-ray diffraction?XRD?, high resolution transmission electron microscopy?HRTEM? and energy dispersive spectroscopy?EDS? were used to characterize the sample morphology and structure. The main contents include:1.Using thermal evaporation method, which takes appropriate Ga elemental to Au as catalyst in high purity nitrogen as a carrier gas, heating gallium source and gold-covered silicon, when the thermostat 1200 ?were annealed 30 min, 60 min, 90 min, 120 min, generated a one-dimensional morphology of nanomaterials Ga₂O₃ there is a significant change, with the length of the nanowire growth annealing time being shorter, more uniform radial width, the number of nano-sheet decreases, increased nanocrystals. Description holding time has a significant effect on the morphology of nanomaterials. XRD, HRTEM and other test samples were analyzed for the gallium oxide.2.Using thermal evaporation, at 1300 ?constant temperature, heating Ga simple substance and Au-covered wafers, high purity N2 as the carrier gas, respectively annealing 30 min, 60 min, 90 min, 120 min, its product structure mainly include columnar nanometer based materials, most likely as a core-shell structure, analyze its internal structure. It is found that the temperature has a significant influence on the morphology and structure of gallium oxide. Through the XRD, EDS and other test analysis, the samples are gallium oxide.3. In this process, small droplets began to appear Au catalyst, with the annealing time no longer existing droplets, discuss the growth mechanism,which is likely to begin with a catalyst VLS growth mechanism involved in the reaction process, and later for the no catalyst VS growth mechanisms involved in the reaction.