Synthesis,Photoluminescence And Field Emission Properties Of 1-D Semiconductor Nanomaterials

one-dimensional（1-D）semiconductor nanomaterials have advantages of both nanomaterials and semiconductor materials.They have good prospects in catalysis,battery,light,display and other fields,attracting wide attention.In this paper,three kinds of one-dimensional semiconductor nanomaterials are synthesized by using different methods.Then we study their growth characteristics,photoluminescence and field emission properties.The results are as follows:（1）Two different CuO nanostructures are prepared by thermal oxidation and chemical corrosion respectively.The study find that thermal oxidation is more easier.In the experiment,the reaction temperature,reaction time are positively correlated with the nanowire diameter,length,and density growth.In chemical etching,there are two different nanostructures: one is Cu（OH）₂ nanowires,the other is CuO nanosheets.Comparing the field emission properties of two different CuO nanostructures,we find that the performance of CuO nanowires is better than nanosheets.When studying the field emission properties of CuO nanowires with different morphologies,we find that the diameter,the aspect ratio and density of the nanowires all effect the performance of the samples.And the sample with small diameter,large aspect ratio and appropriate density performance well in field emission test.In this study the best sample is the one which synthesized in 450 ℃ heated 5h.Its open voltage is 0.75 V/μm,threshold voltage is 1.65 V/μm,and the field enhancement factor is 13742.（2）ZnO nanorod arrays are prepared by sol-gel method.In this study,we find that the diameters of samples grown in Si（Ⅲ）are smaller than the other,and the samples grown on glass are with better orientation.When the reaction time become longer,the diameters of nanorods will be longer.In photoluminescence analysis,we find that ZnO nanorods have two emission peaks,which are at 367.8nm and 478.6nm respectively.The former is exciton recombination luminescence,and the latter is caused by oxygen vacancies.When studying the field emission performance,we find the samples with different morphologies performance different field emission properties.The samples with small tip size,appropriate density are easier to emit electrons.The sample in Si（Ⅲ）substrate reacting 6h has the best field emission properties.Its turn-on voltage is 4.7 V/μm,threshold voltage of 5.1 V/μm,and the field enhancement factor is 5316.（3）In₂O₃ nanowires are prepared by chemical vapor deposition method.By study,it is found that the content of the catalyst,reaction temperature,reaction time are positively correlated with nanowire diameter,length and density.And in different positions we obtained nanowires with different density.There is an optimum growth position.In₂O₃ nanowires have a photoluminescence peak.It is caused by an impurity level emission which is from the oxygen vacancies.From the field emission test,we find samples with large aspect ratio,small diameter sample performance better.In this study,the best performance among the samples is the one in which thickness of gold is 10 nm,growing distance is 2mm,temperature is 1050 ℃,reaction time is 2h.Its turn-on voltage is 2.5 V/μm,threshold voltage is 4.3 V/μm,and the field enhancement factor is 3894.