Preparation And Piezoelectric Properties Of Zirconate Titanate Barium Calcium Film

With the rapid development of electronic information,integrated circuits and micro-electromechanical systems（MEMS） and other areas,the demand for piezoelectric thin film materials and miniature piezoelectric sensor is also increasing.Environmental constraints and social sustainability by,conventional piezoelectric materials（leaded） was limited, high performance lead-free piezoelectric film and related sensors have a wide range of applications.Since x Ba_0.7Ca_0.3Ti O₃-Ba Zr_0.2Ti_0.8O₃（x BCT-BZT） Lead-free piezoelectric material was found near quasi-phase boundary（MPB） has amazing piezoelectric properties,the piezoelectric coefficient d₃₃ can reach 620 p C/N, comparable lead-based piezoelectric material, which has aroused widespread concern related to researchers.0.5BCT-BZT film material has the advantage,easy to collect energy,lower driving voltages applied to the integrated circuit and better potential.However,unlike 0.5BCT-BZT piezoelectric ceramics,piezoelectric properties 0.5BCT-BZT thin film material is not very good. The main reason for the system the crystallization temperature of the film is high,a low degree of crystallization,resulting in no film texture of poor quality.The higher crystallization temperature is also greatly reduced its used in electronic information,MEMS and other areas of potential.This selection of sol- gel method 0.5BCT-BZT film by introducing La Ni O3（LNO） seed layer optimized interface.By XRD,AFM and PFM and other testing comparative analysis found that with respect to the BZT-BCT film, under BZT-BCT/LNO thin films at low to complete crystallization, and showed significant（100） texture;through the two thin film performance test analysis found that after the optimization of the quality of the seed layer, the piezoelectric, ferroelectric and dielectric properties of the film are greatly improved.The study found,for 0.5BCT-BZT film,the need for high temperature at 700 °C can be transformed into entirely perovskite structure,accompanied by poor texture,leakage current,the electrical properties of weak defects.In order to solve the above-described series of problems,we have introduced a La Ni O3（LNO） film seed layer at the interface.The study found that in 0.5BCT-BZT/LNO crystallization process,LNO seed layer may be provided as 0.5BCT-BZT film particle nucleation,so 0.5BCT-BZT film crystallization temperature significantly lower（550°C）,and obvious enhance its piezoelectric properties.