Warm White Light-emitting Diode From Sb-doped P-ZnO Nanowire Arrays/n-GaN Film

A whole interfacial transition of electrons from conduction bands of n-type material to the acceptor levels of p-type material makes the energy band engineering successful. It tunes intrinsic ZnO UV emission to UV-free and warm white light-emitting diode(W-LED) emission with color coordinate of around(0.418, 0.429) at the bias of 8-15.5 V. The W-LED was fabricated based on antimony(Sb) doped p-ZnO nanowire arrays/Si doped n-GaN film heterojunction structure through one-step chemical vapor deposition(CVD) with quenching process. Element analysis showed that the doping concentration of Sb is 1-2 %. The I-V test exhibited the formation of p-type ZnO nanowires, and the temperature-dependent photoluminescence(PL) measurement down to 4.65 K confirmed the formation of deep levels and shallow acceptor levels after Sb-doping. The intrinsic UV emission of ZnO at room temperature is cut off in electroluminescence(EL) emission at a bias of 4-15.5 V.Our result is unique and will be an invaluable information resource for scientists in both academia and industry. We give our 3 brief reasons as following.1, A whole interfacial transition of electrons on conduction bands of n-type material to the acceptor levels and deep levels of p-type material makes the energy band engineering successful, in which the wide bandgap transition of electrons from conduction band to valence band in a sole material is avoided.2, we realized the p-type ZnO by using Sb doping and fabricated p-type ZnO based LED.3, The whole interfacial transition tunes intrinsic ZnO UV emission to UV-free and warm white light-emitting diode(W-LED) emission with color coordinate around(0.418, 0.429) at the bias of 8-15.5 V based on p-type Sb doped ZnO nanowire arrays/Si doped n-GaN film heterojunction.