Research On Magnetoresistance Effect Of Pn Junction

The current research on the pn junction magnetoresistance effect depends too much on the experiment,and the occurrence mechanism of the effect lacks a systematic theoretical explanation.On the other hand,there are also lack of comprehensive analysis and summary for the influences on the pn junction magnetoresistance effect.In this paper,we think that because of the Lorentz force,the carriers are redistributed in pn junction with the applied magnetic field,and the redistribution of carriers can lead to the change of the geometric shape of the space charge region,such change induces the transform of the current-voltage characteristics of pn junction.Based on this,a theoretical model was established to calculate the concentration’s distribution of the electrons and holes in the neutral region of the pn junction with the applied magnetic field.The specific change in the geometric shape of the space charge region was given and the contribution of Lorentz force’s scattering to carrier mobility was analyzed.As a result,this paper gives a systematic explanation for the reason of the pn junction magnetoresistance effect.In addition,the influences on the magnetoresistance effect of pn junction are also studied,such as doping concentration,ratio of width to length and temperature,et al.This paper finds that the current-voltage characteristics of the pin junction show non-monotonic variation with the width of the i-region width for the first time,and the model is established to give the detailed explanation for the non-monotonic characteristic,pointing out that the recombination and diffusion in i-region lead to the inhomogeneous distribution of excess carrier at the boundary of i-region,as a result,the I-V characteristics of pin junction shows the non-monotonic phenomenon.At the same time,we focus on the effects of doping concentration ratio between p-region and n-region and carrier lifetime on the non-monotonic characteristics.In addition,the reverse characteristics and magnetoresistance of pin junction are also studied.In conclusion,this paper further perfects the theoretical model of the pn junction magnetoresistance effect,and explains the changes in the electrical transport properties of the pn junction with the applied magnetic field in more detail.At the same time,the factors on the pn junction magnetoresistance effect were analyzed,such as doping concentration,ratio of width to length,and temperature.In addition,the discovery of the non-monotonic variation of the pin junction current depending on the i-region width is very meaningful for the study of the pin junction.