Photoelectric Properties Of The SrTiO₃/TiN/Si Heterostructure

In this thesis,the Sr TiO₃?STO?films were epitaxially grown on Si substrates by the pulsed laser deposition using Ti N as a buffer layer.The photoelectric properties of STO/Ti N/Si heterostructure were systematically investigated under illumination by different light sources.The main research results are listed as follows:1.By optimizing the deposited parameters,the epixtailly Ti N buffer layer and STO film with high quality was grown on Si substrates;2.The photoelectric properties and the position detect sensitivity of STO/Ti N/Si heterostructures were measured.Under 365 nm,532 nm and 808 nm illumination,the photovoltaic response of STO/Ti N/Si heterostructures is 101 m V,136 m V and 190 m V,respectively.Compared to the Ti N/Si and Si,the STO/Ti N/Si heterostructures have an improved photovoltaic effect not only in the ultraviolet region but also in the visible and infrared regions.Moreover,the position detection ability of the STO/Ti N/Si heterostructures is better than that of Ti N/Si and Si in the ultraviolet region;3.The influence of deposited oxygen pressure on the photovoltaic properties of STO/Ti N/Si heterostructures was investigated.It is found that the photovoltage of samples increased with the decreasing oxygen pressure,which indicated that the oxygen vacancies has an impact on the photovoltage of the samples;4.Lastly,we designed a photodetector prototype using the Sr TiO₃/Ti N/Si heterostructure as the detector.