Electronic Structure And Magnetic Transport Properties Of Fe?N Co-doped In₂O₃ Diluted Magnetic Semiconductors

N-doped and?Fe,N?-codoped In₂O₃ based diluted magnetic semiconductors?DMSs?have been fabricated on SiO/Si?100?at different sputtering environment by Radio frequency magnetron sputtering method.Microstructure and magnetic transport properties of the magnetic and nonmagnetic element doped In₂O₃ based DMSs have been systematically studied by structure characterization and performance test methods,such as XRD,XPS,XAFS,SQUID,Hall,R-T,and U-V.Furthermore,the electronic structure and microcosmic mechanism of N-doped and?Fe,N?-codoped In₂O₃ films also been studied by first principal calculations,and obtain the following results:1?Different concentrations?0%,2%,5%?of N-doped In₂O₃ films been prepared by Radio frequency magnetron sputtering method.XRD and XPS results show that N atoms incorporated into In₂O₃ lattice by substitute O atoms,no other related second phase impurities founded.Different doping concentrations of N-doped In₂O₃ films show room temperature ferromagnetism?FM?and semiconductor conductive properties.The saturation magnetization?Ms?of the doped In₂O₃ films increased monotonously,while the Carrier concentration?n?and band gap?Eg?decreased with the increase of N concentration,excluding the possibility that carrier adjustment mechanism induced room temperature ferromagnetism.The first principles calculation result show that the total magnetism?Mtot?increased with the increase of N atoms in N-doped In₂O₃ system.Furthermore,the FM in N-doped In₂O₃ system is induced by the direct exchange interaction between doped N atoms and surrounding O atoms.2??Fe,N?-codoped In₂O₃ films were fabricated by Radio frequency magnetron sputtering method.The structure analysis method?XRD ? XPS?show that?Fe,N?-codoped In₂O₃ films still keep the cubic bixbyite structure of In₂O₃.The doped Fe and N element incorporated into In₂O₃ lattice with a mixed valence of +2?+3 and-3,no second phase relating to Fe and N appeared.Fe K-edge XAFS which can identify element and FEFF9.0 suggest that Fe substitute In1 atom combined with two oxygen vacancy?2Vo?surrounding.Magnetic and transport properties shoe that the codoping of N element can effectively enhance the magnetism of Fe-doped In₂O₃ film,lowing the concentration of n and increasing the resistivity???of the film.The first principles calculation results show that the codoping of N change the magnetic interaction between neighboring Fe atoms from AFM to FM,as well as lowering the total energy and enhancing the MS.The ferromagnetism of?Fe,N?-codoped film can be attributed to bound magnetic polarons mechanism?BMP?mediated by Vo and the super exchange interaction between Fe:3d-N:2p-Fe:3d.