Atomic Layer Deposition Growth And Physical Properties Of Cu₂O Thin Films

Cu₂O film materials are widely used in the photoelectric detector.However,according to the traditional preparation technology of Cu₂O materials,it is easy to produce Cu O phase impurities in the preparation process,poor crystalline quality and low hole concentration,so it is difficult to meet the requirements of photoelectric detection's high responsiveness of the device and other issues.In this paper,we proposed a new method for preparing Cu₂O,which is atomic layer deposition technique.The crystal quality,surface roughness,optical and electrical properties of Cu₂O thin films prepared by this method are studied.The Cu₂O thin films were doped with N-dopant,and the properties of Cu₂O films were compared and analyzed before and after doping with N.The main contents of this article include the following two parts:?1?The effects of growth conditions on the structure,morphology and properties of the deposited Cu₂O films were investigated by changing the growth chamber temperature and growth cycle.By comparing the growth rate,absorption edge,crystal quality,carrier concentration and surface roughness of Cu₂O thin film with a series of test results.We got the optimal growth temperature of Cu₂O film is 250?by atomic layer deposition.At this time,the absorption edge is about 460nm,the carrier concentration is 1.27×10¹⁵cm^-3,and the mobility is 8.62 cm²V^-1s^-1.As a result,we have achieved the control of film uniformity and thickness.Based on the above results,the N-doped Cu₂O films deposited by atomic layer deposition also will be studied.?2?The high-quality N-doping of Cu₂O thin films was carried out with NH₃ as N source by the?-doping of plasma-enhanced atomic layer deposition.Based on the comparative analysis of the N-doped and un-doped Cu₂O samples.The results show that N-doped Cu₂O exhibits a blue-shift from 460nm to 400nm,and the optical properties are improved.And it can effectively adjust the hole concentration of Cu₂O,the carrier concentration becomes1.39×10¹⁶cm^-3 which is about increased by a factor of 10.Also,the p-type electrical properties of Cu₂O are improved.