| PLD film deposition technique and RF magnetron sputtering film deposition technique were respectively employed to develop the mechanism of the Ga2O3 film and the NiO film and the non-stoichiometric films were fabricated.In our work,the Au/Ti/GaOx/NiOx/ITOp-NiOx was fabricated and the mechanism of the resistive switching was studied.The migration of oxygen vacancies caused the alteration of Schottky barrier at the interface of the Ti/GaOx,resulting in the BRS behavior and the formation and rupture of filamentary paths at the GaOx/NiOy resulted in the URS behavior.The switching operation could be transferred from BRS to URS mode after the the proper soft breakdown of the p-n junctions(GaOx/NiOx).The main achievements are summarized as follows:1.NiO thin film was fabricated using radio frequency magnetron sputtering and Ga2O3 thin film was grown by pulsed laser deposition technique.And we systematically researched the influence of temperature about to the quality of the films.2.The structure of the device is Au/Ti/GaOx/NiOx/ITO.Without the soft breakdown of the interface of GaOx/NiOx,the device shows the bipolar resistance behavior.Through a forming voltage operation with compliance current,the soft breakdown occurred,the switching operation is transferred from BRS to URS mode.3.The read and write performance and resistance to fatigue properties have been characterized.Similarly,the read and write performance and resistance to fatigue properties of the unipolar resistance switching have been characterized.4.In order to realize the origin of the switching characteristics,the conduction mechanisms responsible for the OFF and ON state are worth to be investigated.I-V curves of the device are redrawn in double logarithmic.And the conduction mechanisms of the two kind of the resistance behavior were studied respectively.And we put forward a schematic diagram to explain the behavior of resistance change to the device,which combined the interface effect and the conductive filaments effect. |
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