Researches Of In_xGa_1-xN And Its Mg-doped Films Fabrication And Characteristic

In_xGa_1-x film is a kind of novel wide band gap semiconductors, whose band-gap energy is continuous adjustable in the range of 0.7eV?3.4eV by changing the components of In. Therefore, these films can emit light of different colors, which have been widely applied in solid state lighting. We fabricated In_xGa_1-x doped with Mg on the basis of the preparation technology of In_xGa_1-x.Firstly, we employed the magnetic sputtering method to grow InN films on Si?111?, with grain size of about 496nm, possess high crystal quality. Secondly, GaN with high sputtering efficiency and less N-vacancy are grown through optimizing process parameters. Both InN and GaN films are hexagonal wurtzite structure. Results indicate that optimal technological conditions of In are 0.6Pa, Ar:N2=20:20,600? ?substrate temperature? and 70W and that of CaN are 0.5Pa,25%N2,700? ?substrate temperature? and 150W. Finally, to transform the n-type semiconductor into p-type, Mg is doped in the films of InN and CaN on optimal technological conditions, whose doping amounts are 0.86 and 8.4, respectively.On the basis of InN and GaN films, process conditions of In_xGa_1-x have been explored. In_xGa_1-x is difficult to form by In target and NGa₂O₃ since In-In bond energy is smaller and it is easy to bound with N to form InN. On the contrary, Ga is harder to access into the films. Hence, In_xGa_1-x is formed by employing In2O3 and NGa₂O₃, whose bond energy is closer. Different In components films are formed by regulating the power, substrate temperature and pressure. In components decrease as substratetemperature rises, since it is easier for In to evaporate in elevated temperature. Pressure is also proportional to In components. Under high pressure, mean free path of sputtered particles decreases, at the same time, In-N decomposition can be inhibited by high pressure. Chances for In to "flee" the film are smaller, therefore In components increases. Mg is doped into In_xGa_1-x films successfully as EDS analysis have shown that Mg content is 1.4%. Electrical performance testing of different In components indicates that the carrier concentration increases but electron mobility decreases.