Effects Of Secondary Electron Emission On Capacitive Coupled Plasmas:Hybrid Model Simulation

Capacitively coupled plasma source (Capacitively Coupled Plasmas, CCP) is a necessary integral part of the semiconductor manufacturing process equipment, generally CCP discharge has the following advantages:the discharge chamber is simple and easy to build, at a low pressure discharge can produce large-area uniform plasma which can depositing a semiconductor film effectively, but also can control the ion energy produce energetic ion bombardment etch material. But with the rapid development of the microelectronics industry, the semiconductor device dimensions become increasingly smaller, which is a higher CCP discharge requirements. In order to meet the needs of the semiconductor process, CCP source is evolving and progress, the process CCP source external discharge parameter selection is very important, such as power supply selection (single-frequency, dual-band, multi-frequency, DC), pressure, discharge gap, etc. parameter. They determine the density, flux, ion energy and other internal plasma parameters, these parameters on the deposition rate, etch selectivity and etch rate has a direct impact. Therefore, it is necessary to examine the effects of these external parameters.In CCP discharge, acceleration of ions in the electric field of the sheath to the electrodes to bombardment, secondary electrons are emitted.Since the CCP discharge pressure is not usually very low (tens to hundreds of mTorr), secondary electron discharge in the discharge will have a certain impact. Most CCP no detailed simulations Effect of secondary electrons, the paper mainly studies considered secondary electron (ion-induced) of the discharge parameters, and to analyze the role played by secondary electrons in the discharge. In this paper, fluid and electronic Monte Carlo method mixed model simulation. Fluid model generally has the advantage of fast calculation, but because it is based on the Maxwell distribution calculation often imprecise. Electronic Monte Carlo simulation can be overcome to some extent defective fluid, Monte Carlo simulation of this paper consists of two parts, one part is electronic body region Monte Carlo simulation, is part of a secondary electron Monte Carlo simulation, this simulation program has a natural advantage, we can separate the two kinds of calculated ionization source, then the impact on the discharge of secondary electrons caused by the contrast. This study specifically include the effect of pressure, voltage, plate board spacing, dual power supplies and DC bias, the results show that the secondary electron effects are usually not only by a single parameter control, but also depends on the match between the selected parameters. Secondary electron contribution depends on its contribution to the ionization rate.