The Analysis And Study Of Soldering Quality Of IGBT Chip Based On Structure Function

Insulated Gate Bipolar Transistor(IGBT) is currently one of the fastest growing power semiconductor devices. With IGBT device is being asked for higher power density and more complex work environment, their thermal reliability is of significant concern. The solder layer of IGBT chip is the key position on heat-flow path and the most likely failure, the soldering quality decides overall thermal performance of IGBT module. So it has significance and application value to study the reliability of IGBT through the analysis and study of soldering quality of IGBT Chip base on the structure function of the thermal transient testing.This thesis analyzed the difference of common-emitter and common-gate test circuit. Results show that the common-emitter test circuit for detecting of soldering quality of IGBT chip has better adaptability. After completing the experiment, a method of taking saturation voltage drop as temperature sensitive parameters is put forward. To avoid the influence of noise and self-heating, Infrared thermography and other methods are used to select the test current. This work combined transient thermal test method to research the transient thermal characteristics of the IGBT device, laid the foundation for structure function analysis soldering quality of chip.Different types of designed samples voids, chip, and other layers of the IGBT module package could be distinguished by structure function. The size of the voids and voids position of the defect sample could be determined by compared with the structure function of normal samples, and the relationship between the voids ratio and the rate of change of resistance in different positions voids could be obtained. As the same time the voids of solder layer can be characterized by thermal resistivity changes, and as the basis of the soldering quality of same batch IGBT.The method for analysis of soldering quality of IGBT Chip base on the structure function is proposed in this work. In the case of other methods cannot effectively carry out Non-destructive testing, it can be used to help with detecting typical defects of IGBT module, and enrich Non-destructive testing of package defects of power device.