High-performance Schottky Junction Based Near Infrared Light Photodetectors

As a important range in electromagnetic wave, Infrared light has been widely studied and used. Schottky-barrier device which exhibited large on/off ratio, high conductive gain or fast response rate has also attracted researcher’s attention. From now, a large number of narrow band-gap semiconductor has been used to prepare different kind of Schottky-barrier infrared photodetector, but their performance, device structure as well as the environment-friend property still have space to improve. So pay attention on the improvement is meaningful not only for builting a better infrared photodetector but also for opening a new gate to develop a better optoelectronic device.In the first part of this article, we synthesized the silca coatied gold nanorod and prepared the Schottky-barrier infrared photodetector based on indium phosphide and graphene. We further built a plasmonic photodetector based on the as-synthesis SiO2@AuNRs and the InP/SLG Schottky-barrier device. The as-fabricated photoeetector was sensitive at 980 nm. Accoring to the optoelectronic analysis, We find that the main parameters of as-fabricated photodetector including responsivity, detectivity, response time, liner dynamic range and noise equivalent power were considerably increased. Theoretical simulation of the SiO2@AuNR decorated SLG/InP based on FEM reveals that the optimized device performance is related to the light confinement effect and localized surface plasmon resonance of the SiO2@AuNRs. This study suggests that decorating plamonic nanoparticle on the device is a potential way to improve the performance of optoelectronic devices.In the second part of this article, guiding by the theory that different kind of carbon-made nanostructures have different physical properties, we use planer carbon nanotube film and graphene to fabricate an all-carbon based photodetector. Optoelectronic analysis reveals that the device exhibit a broadand sensitivity and the performance of the device under 980 nm was much better than other device with similar geometry. This study suggests that fabricating the device based on the different types of carbon-made nanostructure is a feasibly method to build high-performance environment-friendly optoelectronic devices.