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Study Of Inkjet-Printed Organic Field-effect Transistor

Posted on:2017-05-11Degree:MasterType:Thesis
Country:ChinaCandidate:Y LinFull Text:PDF
GTID:2308330488965122Subject:Optical engineering
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Inkjet printing is a promising technology because of the material conservation and facile patterning compared with other solution processing techniques, facilitating the scalable fabrication and commercialization of organic thin- film transistors(O TFTs). In this paper, we improved the performance of the field effect transistor based on the interface modification, by studying the inkjet printing conditions. Comprehensive contrast between spin coated and inkjet printed device performance was carried out through optimizing the process conditions. This thesis was divided into the following three aspects:1. Main work was completed by using Dimatix-3000 inkjet printing equipment for the preparation of nanometer silver electrode layer, by studying the different parameters, including the substrate temperature, layer number of printing, printing drop spacing for silver(Ag) electrodes in SiO2 and glass substrate surface, the influence of printing conditions to get no coffee ring effect silver electrode, for the preparation of field-effect transistors.2. Based on pentacene materials, the device performance of different substrate surface treatment, by optimizing the insulating layer, to got high-performance OFET devices, in combination with 1 part of the study, then he prepares the electrode layer by ink jet printing to compared the performance of the device that have coffee ring effect or not.3. Combined with the result of second, poly(3- hexylthiophene)(P3HT) based OTFTs by inkjet printing were fabricated and explored by electrical analysis and morphological characterization. By optimizing the processing conditions, the comprehensive performance in terms of the field-effect mobility of inkjet printed P3HT-based OTFTs was comparable to those of spin coated P3HT-based OTFTs. More importantly, with the employment of the electrode buffer layer, namely Br(C H2)5N(CH3)3Br, the field-effect mobility of both spin coated and inkjet printed OTFTs were improved in accordance with the expectations, resulting from the reduced contact resistance and improved film quality.
Keywords/Search Tags:field-effect transistors, ink-jet printing, interface modification, coffee ring effect
PDF Full Text Request
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