Study Of SIW Microwave Millimeter Wave Passive Circuit And The Key Technology About Thz

With the increasing demand of microwave millimeter wave circuit in the field of military, civilian communications and other fields. the performance of microwave millimeter wave circuit are required higher and higher. The rectangular waveguide in the microwave circuit due to its large size needs to be improved immediately. In contrast with the rectangular waveguide, the substrate integrated waveguide have the priority of low insertion loss, high quantity factor and easily integrated. It has leaded people to use this new structure to design the passive devices, for example, filter and power divider. For its unique physical property and abundant spectrum resources, the submillimeter wave have a big application prospect in the military and high speed wireless communication area. The RF front-end is the basement of the high speed wireless communication system, meanwhile, the power amplifier has great influence on the performance of the RF front-end. So, it is necessary to have a research on the submillimeter amplifier. Its layout needs to be designed according to the principle which is different from the traditional way.This thesis first introduces the basic theory of the substrate integrated waveguide(SIW),and analyzed the operation principle and mode, rectangular equivalent and transform circuit about the SIW. Then we use this structure to design the filter and power divider. In the process of designing the filter,the microstrip-to-SIW transitions, complementary split ring resonator(CSRR), T-junction post, inductor window and U-shape slot multiple-mode resonator(MMR) are been used. The three periodic butterfly radial slot(BRSs)and planarity magic T are applied in the designation of power divider. The final result demonstrate that the filters and power divider designed in this chapter are succeed and meet the requirements expected.The second part of this thesis choose the suitable High Electron Mobility Transistor(HEMT) small-signal model on the basis of the physical structure and operation property of the HEMT. Parameters in the small-signal model are extracted by using the de-embedding method. Because it makes big deviation and low reproducibility if we use the measured S parameter to extract the model parameters directly in submilimeter waveband, the extrapolation is introduced as the new method to finish the modeling. The extrapolation in this thesis means that use the measured parameter gotten in the low frequency to de-embed and get simulation S parameter in the high waveband. In order to improve the accuracy,the cut-off frequency and maximum oscillation frequency are introduced. After accomplishing the modeling with the components value defined, we use this model to design a 100 GHz power amplifier in ADS and accomplish the layout in HFSS. The final simulation result accorded with the expectation.