The Study Of Magnetoelectric Effect Based On YIG/PZT Layered Structure

Tunable microwave devices are widely used in radar, telecommunication and RF measurement systems. Traditional tunable reciprocal and nonreciprocal microwave devices based on microwave ferrites could be magnetically tuned in a very wide frequency range, but it is relatively slow and is associated with large power consumption. And another class of tunable microwave devices fabricated by ferroelectric materials has a electric tuning in a relatively narrow frequency range, but it is usually faster and consumes less power than magnetic tuning. Recently, more and more researchers focus on a more promising dual tunable microwave device especially made by ferrite-ferroelectric layered structure, which combines the advantages of ferrite and ferroelectric tunable microwave devices.Strong microwave magnetoelectric(ME) effect and large ME coefficient can be obtained from ME materials based on ferrite-ferroelectric layered structure. Our study is mainly about the fundamental research on ME effect of ME material based on YIG/PZT layered structure under microwave frenquencies. HFSS simulation for ME material based on YIG/PZT layered structure under microwave frenquencies was implemented and the simulation results show that a linear relationship can be observed between ferromagnetic resonance(FMR) frequency shift and applied H or U across ME material. When in-plane H or out-of-plane H was implemented and applied U across PZT was 1000 V, such electronic tunability was got from YIG/PZT ME material that FMR frequency shift of the 9.1 μm thick YIG film was 10.5 MHz for parallel H or 15.8 MHz for perpendicular H and that of 20μm thick YIG film was 8 MHz or 13.3 MHz. The conclusion can be drawn from our study that an increase of FMR frequency shift by decreasing film thickness can be realized and the ME coupling is stronger for H perpendicular to the bilayer than for in-plane H. The results are in good agreement with the theory. The YIG-PZT bilayer structure could form dually electric and magnetic field tunable ferrite-piezoelectric microwave devices.