Research On Ga N MMIC Class-F Power Amplifiers

As the technology of mobile communication, aerospace, electronics growing by leaps and bounds in their respective fields, as their technology becoming more and more mature, they make more and more contributions to the whole humankind. However, rapid progress also brings a huge challenge. The Rf circuit acts as an important part to these areas, especially the power amplifier, which is the core components of RF transmitter and receiver circuits,and plays an irreplaceable role.How to achieve high power, high efficiency and miniaturization has become the main direction to cope with the new challenge.Aiming at these problems, based on the advantages of class-F PA, the third generation semi-conductor material-GaN and the MMIC circuit structure,this thesis focus on the research and implementation of two GaN MMIC class-F power amplifiers, whose frequency bands are L and S band respectively. Besides, we also implements a GaN hybrid integrated class F power amplifier., The main content of this thesis is as follows:1. Developing history and recent domestic and abroad dynamic study of class-F PAs are introduced firstly,then we make a brief description of the reported technical specifications of class-F PAs, which make a reference for the PA design.2. The basic principles of class-F PA are analyzed theoretically, formula is deduced to explain the wave shape principle and reasons of efficiency increasing.3. The following chapter briefly introduces the basic principle of GaN HEMT devices and passive components,and presents the physical properties of the GaN MMIC active and passive components that used in this paper. Then we focus on the ADS simulation procedures of the two GaN MMIC class-F PAs whose center frequency is 1.8 GHz and 2.4 GHz, and introduction of the harmonic wave control and fundamental wave matching methods. For the 1.8GHz PA, the simulated maximum output power is 31 dBm, the simulated maximum gain is 16 dB and the simulated maximum PAE can reach to 71.4%. For the 2.4GHz PA, the simulated maximum output power is 32 dBm, the simulated average gain is 10 dB and the simulated maximum PAE is 59.3%.Then we test the implemented MMIC chip, the test results are: the 1.8 GHz PA’s maximum output power is 24.1dBm, power gain is 5 dB, the highest PAE is 48.3%. For the 2.4 GHz PA, the maximum output power is 27 dBm, average power gain is 6 dB, maximum PAE is 41%.4. Another 2GHz hybrid integrated GaN class-F PA using Cree company’s CGH40010 10 W GaN chip is implemented. After simulation using ADS, PA’s small signal gain is 16 dB, return losses are below –10dB,the maximum output power is 40 dBm,power gain is about 18 dB and the highest PAE is 80% by large signal simulation. We implement the hybrid integrated class-F PA by using FR-4 substrate and have the test. After testing, the small signal gain of the PA is 16.5dB, return losses are about-10 dB, the maximum output power is 36 dBm, power gain is about 15 dB, the highest PAE is 60%.