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The Study Of The Film Bulk Acoustic Resonator Technology

Posted on:2015-10-29Degree:MasterType:Thesis
Country:ChinaCandidate:H M JiangFull Text:PDF
GTID:2308330473950561Subject:Electronic and communication engineering
Abstract/Summary:PDF Full Text Request
In this dissertation, based on deeply analyzing the theory and technology principle of the film bulk acoustic resonator(FBAR), the film bulk acoustic resonator(FBAR) technology are discussed and investigated in detail. The main work and achievements are as follows:1. The overall design and implementation scheme of FBAR have been laid down based on the survey and study on the current development trends of FBAR at home and abroad;2. The design and study of the process scheme of membrane FBAR devices;3. The design of the layout and process parameters of FBAR;4. The study on 3D chemically anisotropic deep-groove etching technology of Si;5. The study on the design and fabrication technology of low-loss transducer;6. The study on the growth technique of ZnO piezoelectric film with high quality;7. The study on the selective etching technique of different film materials in the transducer structure layer.By tackling the key problems such as the device membrane formation, selective etching of different film materials and the growth of ZnO piezoelectric film with high quality, a FBAR sample which satisfied the specifications of the thesis subject has been developed. The main specifications of sample are as follows: center frequency of 3194 MHz, insertion loss of 3.8dB, Q factor of 230.The technology breakthrough of FBAR has been achieved at home through this subject and it established a solid foundation of FBAR technology application to the new generation of high-performance, high-reliability communication electronic system.
Keywords/Search Tags:film bulk acoustic resonator(FBAR), membrane, anisotropic deep-groove etching, piezoelectric film, selective etching
PDF Full Text Request
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