Analysis Of Electromagnetic Coupling Properties For Chaotic Cavity Based On RCM

With the development of electronic technology, electronic system and the electromagnetic environment becomes more and more complex and various. The uncertainty, randomness and sensitivity is becoming more and more evident when electromagnetic interference is coupling into the target system. The statistical description of the electromagnetic coupling effect is obviously superior to the deterministic description. Random coupling model(RCM) has important significance in electromagnetic compatibility(EMC), statistical electromagnetics and radiation protecting and hardening. In order to make it a researching tool with generality, we need to carry on the theoretical analysis and experimental research in-depth. In this paper, we aimed at the typical problem in high power microwave(HPM) effects and EMC research, the electromagnetic coupling of complex cavity. The random coupling model was introduced and adopted in order to describe the coupling properties of wave chaotic cavity. RCM was analyzed by combination of the theory and the experiment.Firstly, based on the status of HPM effect research, the characteristics and limitations of existing method of HPM effects were analyzed and compared. Focusing on the influence of the uncertainty of complicated cavity and random process, the RCM was introduced and applied into wave chaotic phenomenon. Aimed at the target point in the complicated cavity, we developed the experiment of coupling properties, extracted the coupling parameters and forecasted the statistical distribution of induced voltage. The FM transmitter circuit was used as the target circuit and the sensitive area and point were determined by the Emscan system. Then we built the experiment platform, determined the experiment measure and designed a set of the experimental data processing. The scattering parameter and radiation scattering parameter were obtained from the experiment and the cavity loss factor was calculated. Combined with the solution process of the normalized impedance, the formula of induced voltage at target point was deduced and then, the statistical distribution of induced voltage was analyzed. Thus, the new ideals and method can be exploited in HPM effects and EMC researching.