| Photoelectric device has been widely used in civil and military field. Currently, commercial semiconductor optoelectronic devices are mainly based on inorganic materials. However, the pro cessing is rather complicated and their cost is high, which is not beneficial for large-scale produc tion. By contrast, organic semiconductors materials have advantages of excellent processibility, l ow cost and large-area scalability. But, organic semiconductors have disadvantages of low carrier migration ability, poor stability. Pure organic or inorganic semiconductor materials have their o wn advantages, but the deficiencies limit their applications. Organic/inorganic semiconductor het erojunction structures can make full use advantages of the organic components of excellent proce ssability and inorganic components of efficient carrier migration ability, leading to excellent perf ormance. In recent years, organic/inorganic semiconductor heterojunction with special optical, el ectrical and magnetic performance has attracted great interest and broad attention of scholars bot h at home and abroad. After reviewing the progress in organic/inorganic heterojunction, we foun d that the further research on mechanism of organic/inorganic heterojunction photoelectric perfor mance is desired. In this thesis, we fabricated orgnic/inorganic p-n junction and studied their phy sical properties. The main results achieved in this paper are listed as below:(1)Vertically aligned Zn O nanrods were fabricated by a facile hydrothermal method on indi um tin oxide(ITO) transparent conductive glass, and PFH/Zn O nanorods heterojunction structur e were prepared by spin coating PFH on Zn O nanorods film. The structure has a strong absorptio n in the ultraviolet visible light area. The current-voltage characteristics of the PFH/Zn O nanorod heterostructure shows a typical p-n junction behavior and the rectification ratio(current ratio me asured at +1 versus-1 V) of 76.5. The heterojunction shows a good photoelectric response, and their photo-to-dark current ratios reach more than two orders of magnitude as well. The increase in the photocurrent under reverse biased condition is greater than that under forward bias, which is a typical characteristic of a photodiode. Persistent photoconduction(PPC) phenomenon was ob served in the fabricated organic/inorganic heterojunction, which is consider to be related to the pr esence of Zn O. The electrical results show that the conductivities of organic/inorganic heterojunction increase with the increase of temperature, showing a typical semiconductor behavior.(2)Zn O nanoparticles were synthesized by wet chemical method and PFH/Zn O nanorods he terojunction structures(normal and inverted planar heterojunction(IPHJ, NPHJ)) were prepared by spin coating technique. In addition, a bulk heterojunction(BHJ) was also fabricated via spin-c oating. The opto-electrical properties were studied. The results show that all structures are with l ow roughness, high quality and a strong absorption in ultraviolet visible light area. The contact b etween two materials was enhanced by using the nanoparticles. The exciton can be spread to the interface quickly and efficiently when the device is illuminated. The heterojunction shows a goo d photoelectric response, and their photo-to-dark current ratios reach more than three orders of m agnitude. The conductivities of organic/inorganic heterojunction increase with the increase of te mperature, indicating a typical semiconductor behavior.(3)Si/PFH heterojunction UV photodetectors designing: We designed a Si/PFH heterojuncti on based UV photodetectors, and the testing result shown that the response of fabricated device t o UV light is fast and stable, demonstrating its practical applicable in future. Such device is easy to be producted massly and indicating great commercial value. |
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