Analysis The Field-plates Structure And Breakdown Characteristics Of Algan/gan Hemts

Wide-band semiconductor material gallium nitride(GaN) has manyadvantages, such as high critical electrical field, high Saturation velocity.Moreover,a two-dimensional electron gas(2DEG)can be induced at theinterface of AlGaN and GaN. So AlGaN/GaN HEMTs attract greatattention in power conversion devices. In order to improve the breakdownvoltage, in this dissertation, different work was done by Synopsys TCADas follows.(1)The reason of the gate field plate to improve the device’sbreakdown voltage and the regulated effect of the electrical field werestudied. In the structure of gate field pate,the maximum breakdownvoltage is1100V.(2)The internal gate field plate was first proposed. The maximumbreakdown voltage is1244V in this structure.(3)Interval gate and source field-plates structure was first proposed,the source field plates was interrupted at the same location of the gateinternal field plates in this structure. The highest breakdown voltage1546V was achieved.(4)The influence of the current of the device by different field plateswas also studied.In a word,the influence of AlGaN/GaN breakdown voltage bydifferent internal field plates was simulated and investigated by SentaurusTCAD in this dissertation,this work has many guidance effect forAlGaN/GaN HEMT experiments and manufacture.