| NAND Flash is developing rapidly and becoming an important storage mediumbecause of its larger capacity, faster I/O rate, lower power consumption and so on inrecent years. It has been widely applied to high-speed storage systems, which can beused in field experiment and electronic warefare such as the radar countermeasuresystem. The article is dedicated to research the key skills of the reliability of NANDFlash storage system, and supposed to improve the reliability of storage systems byputting forward effective solutions on NAND Flash.Firstly, the article introduces the causes of low reliability, analyses and proposessolutions for them. Hardware ECC measures could improve bit error rateperformance, and a reliable invalid block management can avoid negative influenceson storage systems by invalid blocks. Also, the wear-leveling skill can extend theservice life of NAND Flash chips. Secondly, the ECC skill is introduced in detail.Hamming code and BCH code are used respectively to solve the bit error problem,both of them are tested and verified in FPGA. Then the article describes theimplementation of invalid block management skill and wear-leveling skill in brief.Finally, the article summarizes the content and outcome of the research, and analyzesthe foreground of research direction. |
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