Measuring And Drawing System Of Multi Beam Light On Thin Films Stress

During the growth process of semiconductor thin films, the thin films properties, suchas thin film stress, thickness, refractive index etc, are always needed to measure in realtime as to precisely control their growth process. Most of the domestic measuringtechonologies on thin film properties are off-line, meanwhile foreign measuring devicesgenerally aim to measure individual property. On the basis of international broad researchon thin film measuring techonologies, the in-situ measurement blueprint of thin filmmulti-properties based on the integration of multi-beam light deflection method isconducted. At the same time, the relative device is designed and the advantages that it canbe used to measure thin film multi-dot stress on two inches’ samples.As to the designing work, many main parts of the device including the opticalmeasuring system, Dammann grating, real-time communication between hardwares,calculating software based on LabWindows/CVI etc,have been analyzed and designed. Atlast, part key experiments and conclusions are given and the further reaserch andimprovements needed to do in the near future are expected.