Research On The ESD Protection Theoretical Simulation And Experimental Of Semiconductor Bridge Initiators

The static security of the semiconductor bridge (SCB) explosive device was investigated in this paper using theoretical and experimental methods. The SCB explosive device was protected by TVS diodes and varistors. The electrostatic protective rule and influence of unprotected SCB and protected SCB were simulated by Pspice simulation software. Afterward, in comparison with the experimental results, the main conclusions are as follows:(1) Electrostatic voltage and series resistance are the main influence factors for SCB in the electrostatic process, and the ambient temperature have no significant effect on the SCB-static process. On the conditions of same capacitance and voltage, the smaller the series resistance is, the higher the electrostatic energy of SCB is and the shorter the electrostatic process is in the static process. On the conditions of same capacitance without string resistance, the higher the electrostatic voltage is, the higher the electrostatic energy of SCB is. On the basis of this, the function formula of SCB electrostatic energy and the electrostatic voltage was evaluated.(2) The smaller breakdown voltage and parasitic resistance for TVS diode is, the stronger ESD protection capability is. The simulation results show that the protevtive capacity of three kinds of SMBJ-type TVS decrease in the order of SMBJ10CA> SMBJ22CA> SMBJ75CA, which is well consistent with experimental results. The harsher electrostatic conditions are, the better the protection effect is. On the conditions of US military standard, SCB electrostatic energy was reduced by 82.3% with SMBJIOCA-type TVS and SCB electrostatic energy was reduced by 99.84% under the condition of 5kV, 500pF, and no series resistance, the ESD protection capability of SCB is improved significantly with SMBJIOCA-type TVS, which indicates that the SMBJIOCA-type TVS could be used to SCB theoretically.(3) The smaller breakdown voltage and parasitic resistance for varistor are, the stronger ESD protection capability is.The simulation results displays that the protective capacity of three kinds of varistors follows the order of 080C-type varistor> 120C-type varistor> 270C-type varistor, consistent with experimental results. The SCB electrostatic energy was reduced by 81.1% with 080C-type varistor on the conditions of US military standard, the ESD protection capability of SCB is improved significantly with 080C-type varistor.(4) When the SMBJ10CA-type TVS and 080C-type varistors are in paraller, the burst and ignition time of SCB explosive device have no significant change on the condition of constant current of 5A, which indicates that the electrical explosion performance of SCB did not affected by SMBJ10CA-type TVS and 080C-type varistors.(5) On the conditions of 500pF, the misfire voltage of SCB explosive device was increased from 6kV to 9kV with SMBJ10CA-type TVS, the misfire ESD energy of SCB explosive device was increased from 9mJ to 20.25mJ with SMBJ10CA-type TVS,the full ignition voltage of SCB explosive device was increased from 8kV to 13kV with SMBJ10CA-type TVS, the full ignition ESD energy of SCB explosive device was increased from 16mJ to 42.25mJ with SMBJ10CA-type TVS, the ESD protection capability of SCB is improved significantly. However,080C varistors failed to effective protective effect because the quicker electrostatic process is, the varistors failed to normal response under the condition without resistance.In a word, TVS and varistor plays a different degree of electrostatic protective effect for SCB. Among the various types of TVS, SMBJ10CA-type TVS has the strongest electrostatic protection ability and has the most effective protection effect on the SCB.