Inhibited Light-Induced Degradation Of Boron And Gallium Co-Doped Silicon Cells

Monocrystalline solar cells is an important part in the market of solar cell. Because it has the incomparable advantage than other solar cells. So it has been firmly dominated the photovoltaic field. The photoelectric conversion efficiency and the cost of monocrystalline solar cells is excellent than other types of solar cell at present. In the background of photoelectric conversion efficiency of silicon solar cells have been towards the 20%, inhibit P-type silicon solar cell conversion efficiency of photovoltaic attenuation have become the focus of researching in the field of science and technology. The light-induced degradation of Boron and Gallium co-doped silicon solar cell has been inhibited when it improved the yield of the battery and it has broad application prospects.The minority carrier lifetime and the impact of interstitial Oxygen and defects in Boron and Gallium co-doped silicon after heat treatment were depth studied. The results showed that interstitial Oxygen content in Boron and Gallium co-doped monocrystalline decreased when the heat treatment temperature increased. High temperatures and prolonged of heat treatment promotes the formation of Oxygen precipitates. Increasing temperature of heat treatment is more conducive to the effective radius of Oxygen precipitates increases after a preliminary pretreatment. Compared Boron-doped monocrystalline, Boron and Gallium co-doped monocrystalline with Gallium-doped monocrystalline, the atoms of Gallium in monocrystalline can inhibit oxygen precipitate nucleation size. The high temperatures and prolonged heat treatment are obvious disadvantages for non-equilibrium minority carrier lifetime. The defects by oxygen precipitation can be as a recombination centers to improve the recombination efficiency of the non-equilibrium minority carrier,then reducing the non-equilibrium minority carrier lifetime.The light-induced degradation for different resistivity in Boron and Gallium co-doped monocrystalline was studied. The results showed that the resistivity of Boron and Gallium co-doped monocrystalline with highest conversion efficiency is 1.5Ω·cm, but the resistivity of Boron and Gallium co-doped monocrystalline with minimum light-induced degradation is 0.5Ω · cm.The performance and light-induced degradation of Boron and Gallium co-doped monocrystalline silicon solar cells to be compared with other different P-typemonocrystalline silicon solar cells were studied. The results show that Boron and Gallium co-doped silicon solar cells have a more stable in the field of light-induced degradation.