| The energy problem is a worldwide problem. Nowadays over consumption of primary energy and the environment problems caused by the using of primary energy are plaguing human race. So, it is the high time to develop new energy. In order to developing and using solar energy, this essay aims to experiment and improve the using efficiency of dye sensitized solar cell and makes contribution to the extensive use of solar energy. Concerning the low catching efficiency of dye sensitized solar cell (DSSC) slowly transit of electrons in the semiconductor TiO2 film,and high costs of platinum electrod, this essay aims to research light anode of the DSSC cell based on α-Fe2O3/RGO nanophase materials and low costs of DSSC based on photonic crystal. This experiment aims to improve the optical anode, using simple one step preparation of flower like α-Fe2O3/RGO nanophase material for dye sensitized solar cell light anode, Through the use of functional groups on the surface of graphene oxide of adsorption in the α-Fe2O3. This process is done in autoclave. Through this process, graphene oxide can be directly reduced to RGO and do not need to add any strong reducing agent. It is proved by experiments that this method is practical and feasible. Then in this essay, from the point of improving light anode absorption ability of optical perspective, photonic crystal is introduced in the dye sensitized solar cell, the experiment focuses on the research and development of new functional materials with multi spectral light absorption of highly ordered photonic crystal structure, and solving the key technical problem of nonsmooth hydrophobic interfacial convection from the group installed in the long-range order of the photonic crystal, and the pore size controllable and efficient electronic and photonic crystal reflector transmission layer between good ohmic contact. With the independent intellectual property rights of the photonic crystal optical anode and efficient DSSC cell preparation technology, this research has important research and application value. |