| With the rapid development of society,people are increasingly demanding for the low-carbon life,which allows us to have a strong preference for clean energy.As the most promising third-generation cells:multijunction thermophotovoltaic cells with high efficiency at high poly times light,generated by running a small noise,almost negligible,since no mechanical structures in it,thus it can be handy carrying,the thermophotovoltaic system composed of a very simple structure which is relatively easy to repair,and many other advantages in the multijunction cell is the power generation per unit volμme is higher than the single-junction cell.Above all,give us a more determined pace to explore the multijunction thermophotovoltaic.With the development of multijunction thermophotovoltaic cells,we found have two main reasons to hinder the development of multijunction thermophotovoltaic cells:the First problem is the choice of materials;the second problem is the current matching of multijunction thermophotovoltaic cells.To solve the two problems,we selection the detailed balance theory to solve the first problem in this paper,and then combined the series circuit theory and Silvaco TCAD simulation software to solve the second problem. The main contents of this paper are as follows:1.In this paper,we use the detailed balance theory to theoretical modeling the theoretical efficiency of dual-junction thermophotovoltaic cells,combined with the existing lattice constant and the band gap of the diagram,design a dual-junction Ga Sb/Ga In As Sb thermophotovoltaic cells,in theory,the efficiency of the dual-junction cells is 30%.in simulating,the Simulated spectra is selected to the temperature is 2000 K black body radiation,the default temperature of the cells is 300 K,with the Silvaco/Atlas software to simulate,we get a real simulation results for 26.66%,compared with the theoretical results and found that the simulation results with the actual results less.2.Simulation systematically the single-junction thermophotovoltaic cells of Ga Sb,single-junction thermophotovoltaic cells of Ga0.84In0.16As0.14Sb0.86,dual-junction thermophotovoltaic cells of Ga Sb/Ga0.84In0.16As0.14Sb0.86.The main simulation to optimize the structure of the device is by changing the thickness of the material and concentration to analyze the impact of changes in material parameters on the cells performance parameters derived from the data, which got out of an optimal device structure.3.Analog the current matching of the dual-junction thermophotovoltaic cells,the mainly method is used the principle of the series circuit,then drawn electrodes from the per cells to measure the quantμm efficiency of the top and bottom of the cell.By changing the cell parameters to adjust the top and bottom of the cell current makes them equal.Finally,by analysis and discussion of the simulation results,obtained an optimal dual-junction Ga Sb/Ga0.84In0.16As0.14Sb0.86 thermophotovoltaic cell structure,the performance parameters of the cell as follows:the conversion efficiency is 26.6627%,open circuit voltage is 1.00166 V,the fill factor is 0.778278,short-circuit current is 31.2122 m A/cm2. |
