Preparation And Research Of Cu（In,Ga）（Se,S）₂Thin Film Solar Cell-related Materials

For the advantages of low cost, long life, no light induced degradation, stable performance, high radioresistance, high absorptivity and photoelectric conversion efficiency, adjustable band gap of absorption material et al, copper indium gallium selenide (CIGS) thin film solar cell is considered to be one of the most promising thin film solar cells. In this paper, CIGS absorption layer thin films were prepared by three-stage co-evaporation. By optimizing the other thin film, the CIGS solar cell was prepared. In order to improve the optical band gap of CIGS thin films, copper indium gallium selenide sulfur (CIGSS) thin films were prepared by sulfurization of CIGS thin films which were prepared by three-stage co-evaporation. Transparent conductive SnO2:Sb (ATO) thin films were prepared by magnetron sputtering. The ATO thin film was applied as transparent conductive layer of the CIGS thin film solar cell for the first time and the CIGS solar cell was prepared.Double-layer Mo back contact prepared by DC magnetron sputtering has good combining with glass substrate and low electric resistivity. CIGS absorption layer with good crystallization was prepared by three-stage co-evaporation. CdS buffer layer which is relatively neat and homogeneous was prepared by chemical bath deposition. Intrinsic ZnO and AZO window layers which have high transmissivity in visible region were prepared by magnetron sputtering. Mountain glyph Ni-Al electrdes were prepared by evaporation. Finally, the CIGS solar cell with10.3%photoelectric conversion efficiency was prepared.In order to improve the optical band gap of CIGS thin films, CIGSS thin films with high band gap were prepared by sulfurizing CIGS thin film in hydrogen sulfide and argon mixture atmosphere. The changes in crystal phases, microstructure and chemical compositions of the thin films after sulfurization in different sulfurization conditions were investigated. Finally, when the sulfurization temperature was550℃and the sulfurization time was60min, approximately200nm thickness of CIGSS thin film which shows a good-qulity chalcopyrite-type structure with no other phases on the surface of CIGS thin film was prepared by optimizing the sulfurization process.By optimizing the sputtering process parameters, ATO thin films which have good crystallization and high transmissivity in visible region were prepared. The ATO thin film which substitutes for traditional AZO thin film was applied as transparent conductive layer of the CIGS thin film solar cell for the first time. Finally, the CIGS solar cell with2.2%photoelectric conversion efficiency was prepared.