The Research Of Low Threshold Rectifier Based On CMOS

With the development of wireless communication technology, the resources of RF energy become more and more rich, which makes it possible for low power consumption electronic products become self-powering devices using the RF energy. Under such condition, the research of RF energy harvesting device plays the decisive role. The RF energy harvesting device can convert the RF power into DC voltage, using the DC voltage can supply power to low power consumption electronic products. This paper systematically introduces the RF energy harvesting device, including the antenna, RF-DC rectifier circuit, power management.This paper uses a new type of structure for RF-DC rectifier circuit, using the MOS instead of schottky diode to design the rectifier circuit. This design can reduce the size to integrate rectifier circuit into the chip. The simulation and the layout are completed after design.The circuits were designed and simulated in180nm twin-well CMOS process and it produced an output voltage of2V at its output with the input voltage of350mV. The thirteen stages rectifier occupied an area of0.23mm*0.146mm and the efficiency of10%for a capacitive load of1OpF has been achieved.