High Efficient GaInP Solar Cell Decorated By Dielectric Nanostructures

High efficient antireflective performance is of great importance for solar cell, optoelectronc detector and optoelectronc device due to the high refractive index and large dispersion relationship of Si and III-V semiconductor material. The most method used to reduce surface reflection is depositing one or multi-layer antireflection coating, which can not match the whole solar spectrum based on negative interference principle and is sensitive to the incident angle. Recently, nanostructures were proved to be the promising candidates to lower the surface reflection over broadband and wide view both theoretically and experimentally.In this dissertation, broadband antireflection dielectric nanostructures for Ga In P solar cells have been systematically investigated from simulation, fabrication, and measurement, which aim at reducing surface reflection and enhancing conversion efficiency for such solar cells. Such investigation should benefit dielectric nanostructures further truly being employed in the above solar cells and finally applied in industrial manufacturing.The experimental results:1. Compared with planar solar cell, the efficiency of periodical nanostructures decorated solar cell is improved 4.27% from 24.42% when the nanostructures are made of Si Ox material and the height is 650 nm with 10 nm thick Si Ox and 50 nm thick Si Nx at the bottom. In addition, the efficiency of non-periodical nanostructures decorated solar cell is improved 4.48% when the nanostructures are made of Si Ox material and the height is 550 nm with 40 nm thick Si Ox and 50 nm thick Si Nx at the bottom.2. Compared with planar Ga In P solar cell and solar cell with single-layer antireflective coating, the dielectric nanostructures decorated solar cell exhibits antireflection over broadband and wide view. The averaged reflectivity decreases from 35.53% of planar solar cell to 13.76% of single-layer solar cell and further down to 5.69% of dielectric nanostructures decorated solar cell.3. Compared with planar Ga In P solar cell with the conversion efficiency of 9.19% and the single layer antireflective coating decorated solar cell with the conversion efficiency of 14.05%, the dielectric nanostructures decorated solar cell exhibits the conversion efficiency of 15.10%. Besides, such improvement is due to the enhancement of open circuit voltage(Voc), short circuit current(Jsc) and filling factor(FF) induced by the high efficient antireflective and passivation performance of dielectric nanostructures.