PECVD SIN For MIM Capacitor Dielectric Film Industrial Applications

Basic passive components such as capacitor and resistor are widely used in integrated circuit manufacturing technology, these devices are usually adopted standard integrated circuit technology, the use of doping monocrystalline silicon, polycrystalline silicon, and metal film, etc. In submicron semiconductor devices in the industry, in the case of device density increasing, because of these devices is close to the silicon substrate, device between the substrate and the parasitic capacitance makes the performance of the device is affected, especially in the radio frequency (RF) CMOS circuits, as frequency increases, the performance of the device down soon.MIM (Metal-Insulator-Metal) capacitance technology development provides an efficient way to solve the problem, the MIM capacitor manufacture in interconnection layer capacitance technology, both compatible with integrated circuit technology, and by far the passive device and the distance between the conductive substrate, overcome the parasitic capacitance, the device performance with the rise of frequency decreased obviously, makes the MIM capacitor technology becoming a radio frequency integrated circuit and analog/mixed-signal integrated circuits of passive components of the mainstream technology.In mainland China’s largest eight inches of chip manufacturing practice, the MIM capacitor technology application is very wide, usually adopt aluminum, copper, titanium, titanium nitride, etc as the material of metal layer, and choose silica dielectric layer, can provide the highest 1 fF/um2 MIM capacitor products. With the improvement of circuit integration,0.13 micrometers and below process that need to be improve the MIM capacitance on the basis of the size of capacitor, therefore requires than SiO2 (ε r about 3.9) higher dielectric constant of dielectric materials. And amorphous SiNx dielectric materials with high dielectric constant (ε r 6～8), low deposition temperature, and easy for integration, is a kind of ideal dielectric material.This topic mainly by chemical vapor deposition (CVD) technology as the foundation, using plasma enhanced chemical vapor deposition (PECVD) technique as the research object, the application materials of the company’s PRODUCER (a kind of thin film deposition equipment) on the machine, through the actual production of several kinds of dielectric film were compared, and the optimization of gas flow, plasma spray to distance on the surface of the wafer, RF power, deposition rate and deposition rate in the process of the deposition process parameters such as time, thus successful preparation of the SiN as high capacity of MIM capacitor dielectric film. The optimized process follow were successfully improved on manufacture of SMIC.