Technology Foundation And Simulation Of Interconnections By Self-propagating Exothermic Reaction Of Al/Ni Foil

Self-propagating exothermic reaction can be used as a localized and rapid heat sourceto achieve material interconnection. Interconnections by self-propagating exothermicreaction of Al/Ni foil has little thermal influence on the base material, and it is suitable forthe interconnection of the temperature-sensitive device or material, especially has a uniqueadvantages and broad application in multi-chip packaging or3D packaging comprising atemperature sensitive device or a thermal mismatch materials MEMS, microbial systems,and micro analysis system. But because of the special heat source, the interconnectiontechnology is difficult to control and the temperature change is difficult to detect using themethod of experiment during the reaction.In this paper, Cu/Cu interconnection is achieved by Al/Ni self-propagatingexothermic reaction. Characteristics of self-propagating exothermic reaction interconnectare summarized by the analysis of the microstructure, failure modes, porosity and shearfracture. Effect of different parameters on the interconnection is analyzed by comparingthe interconnection results of different preheat temperature, solder thickness and pressure,which provide theoretical guidance to industrial application of self-propagatingexothermic reaction interconnections.The finite element model of self-propagating exothermic reaction interconnection isbuilt based on the structure of Cu/Cu interconnection in order to analyze characteristics oftemperature field, and this model is verified by experiment of temperature measurement.According to influence of different solder thickness and pre-heating temperature on thetemperature field of self-propagating exothermic reaction interconnection, multi-variablelinear return analysis of the highest temperature and the melting time at different locationsof the solder is used to provide theoretical guidance for setting parameter ofself-propagating exothermic reaction interconnection. Cu/Si interconnection is achieved by Al/Ni self-propagating exothermic reaction.Temperature field of Cu/Si self-propagating exothermic reaction interconnection issimulated by finite element method to analyze temperature distribution of different basematerial on each side. The result is compared with the temperature field of Cu/Cuinterconnection to analyze the influence of different connecting material on thetemperature field of self-propagating exothermic reaction.