A New Micro Actuation Sturcutue Used To Eliminate The Dielectric Charging Of RF MEMS Switch

RF MEMS is the RF products processed by MEMS technology, not only on the volume is far less than the traditional RF devices, but also it can be compatible with the traditional IC technology, it has low price, small volume, light weight, high reliability, etc. In the field of wireless communication the RF MEMS switch is the most basic, most critical, most widely application prospect of RF MEMS devices, and it is one of the most successful devices in the field of radio frequency. In the study of RF MEMS switches, the capacitive RF MEMS switches is the most critical device.However, the switch reliability problems become the main bottleneck restricted its commercialization, the dielectric charging of capacitive RF MEMS switch is the key problem to affect its reliability problems. In this article, through analysis of the actuation mode, the electrostatic attraction is the main cause of charge accumulation, because thermal actuation, magnetic actuation, piezoelectric actuation have their own shortcomings, they are not suitable for capacitive RF MEMS switch, so we put forward a new drive way to replace the electrostatic forces actuation, namely eliminate charge accumulation by electrostatic repulsion drive mode from the roots. However, due to the electrostatic repulsion drive mechanism is not very clear, the current theory is still not enough to support the design of superior performance actuator, so this article proceed from the electrostatic repulsion typical structure for micro deformable mirror, we proposes a new actuation structure, and its structure parameters are simulated used the finite element simulation software COMSOL Multiphysics, compared with typical structures, the simulation results show that the new structure can increase the displacement of moving plate, and this paper has provided the theory support for later development of higher reliability capacitive MEMS device.