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Investigation Of AAO Film On ITO Glass

Posted on:2015-12-28Degree:MasterType:Thesis
Country:ChinaCandidate:S D LiuFull Text:PDF
GTID:2271330503452492Subject:Condensed matter physics
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Nearly half a century,anodic aluminum oxide(AAO) is attracting people’s interest for its unique structure and wide range of applications.Highly ordered AAO ?lms can be used as template to induce the formation of nanostructures such as nanowires, nanodots, nanorods and nanotubes.It have application prospect in the ?eld of magnetic materials, photovoltaic etc. In recent years, the preparation of ordered alumina membranes on rigid substrate is getting people’s attention. In this article, we focus on the controllable preparation of AAO ?lms on conductive tin-doped indium oxide(ITO) glass and the e?ect of di?erent preparation conditions on sample properties. Compared with the ordinary method of employing pure aluminum foils or plates, preparing anodic aluminum oxide on substrates can avoid brittle porous structures and reduce the di?cult to transfer ?lms.Thus the AAO porous structures would get a wider range of application.In addition, many photonic applications call for nanowire structures on transparent conductive substrates. ITO glass is a good choice to satisfy this demand.In this article, magnetron sputtering was applied to deposite aluminum on ITO glass. Then we investigated di?erent sputtering conditions. Al/ITO structure was anodized to Al2O3/ITO structure under di?erent anodizing conditions. With current-time curve, AAO formation process was analysed. It shows that 5 stages occurred and AAO ?lm could be formed faster with the increasement of current density. The ordered porous ?lms would be formed faster under high oxidization density.Barrier layers would prevent the electrical contact of the AAO bottom and the substrate. A direct method to get rid of barrier layer has been investigated when anodizing in oxalic acid, which has an important application prospect in assemble of nano optoelectronic devices. It shows that AAO?lms get thicker ?rst and then get thinner.Finally, photoluminescence(PL) and transmission of the ?lms are measured. The PL spectrum of AAO can be divided into two photoluminence centers at 450 nm and 455 nm. F center and F+ center would change under di?erent anodizing time. PL spectrum of sample formed in oxide acid is more obvious than it formed in phosphoric acid. Transmission of the sample would increase with longer anodizing time. After pore widen, the transmission of the sample would increase,too.
Keywords/Search Tags:AAO, Semiconductor materials, ITO glass substrate, PL property, Transmission
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