| Zn S-based transparent conductive film with a low resistance and high optical transimittance has been widely used in solar cells, liquid crystal, organic light emittance diode, etc. Recently, the transparent conductive thin film applied in the market has high-cost and low optoelectrical property. Therefore, aiming at transparent conductive thin film with large wavelength, high transmittance and low resistance, Zn S/Cu multilayer and Zn S: Cu films were fabricated on glass by alternating sputtering and co-sputtering, respectively. Phase structure, surface morphology, optical transmittance and sheet resistance of the films were studied by X-ray diffraction(XRD), Atomic Force Microscopy(AFM), Scanning Electron Microscopy(SEM), UV–visible spectrophotometer(UV–vis) and four-point probes. Meanwhile, the effect of different Cu and Zn S layers thickness, different layers of the films on microstructure and optoelectrical properties of the Zn S/Cu multilayers were investigated. Furthermore, the influence of annealing temperature on the microstructure and properties of Zn S/Cu/Zn S film, Zn S/Cu/Zn S/Cu/Zn S film and Cu doping the Zn S film were investigated.Comprehensive property of the film was influenced by film microstructure, electron concentration and the light interference effect caused by the each layer thickness. It was found that the growth of Cu was island pattern. When the thickness of bottom and top Zn S layer was 42 nm and Cu was 16 nm, the maximum optical transmittance of 87% and the resistance of 62.5?/sq were obtained for Zn S/Cu/Zn S film, meanwhile the maximum figure of merit 3.76×10-3?-1. When the layer was increased to five, the transmittance of the Zn S/Cu/Zn S/Cu/Zn S film was decreased in the visible light area and increased to 88% in the red light area, the transmission peak moved to the long wavelength. Zn S/Cu/Zn S/Cu/Zn S film has a lower resistance of 56.4?/sq, meanwhile the maximum figure of merit 4.48×10-3?-1.The crystal performance and the light transmittance of Zn S/Cu multilayer flims could be improved, meanwhile the resistance reduced after annealing. The crystalline of Zn S/Cu multilayer films was improved, and particles cluster was observed when the annealing temperature at 200℃. When the temperature was 100℃, both films had the best comprehensive performance. The lowest resistance of 46.3?/sq, the maximum optical transmittance of 90% and transimittance of 73% at 1100 nm were obtained for Zn S/Cu/Zn S films. Meanwhile, the lowest resistance of 40.4?/sq, the maximum optical transmittance of 89% and transimittance of 72% at 1100 nm were obtained for Zn S/Cu/Zn S/Cu/Zn S films.With the increased of annealing temperature, Zn S: Cu film preferred orientated at Zn S(111) direction. Continuing to increase the annealing temperature, Cu atoms occupied the Zn position of the Zn S crystal lattice and formed the p-type semiconductor Cu2 S, Cu2 S grain growing and Cu S grain appearing, meanwhile the surface morphology of thin film changed from the shape of granular to the flake. The optical band gap was decreased and the transimttance of Zn S: Cu films firstly increased and then decreased with annealing temperature increasing. In addition, the sheet resistance was decreased and then increased. The maximum optical transmittance of 80% and the resistance of 164.1?/sq were obtained for Zn S: Cu films at 200℃, meanwhile the maximum figure of merit 6.1×10-4?-1. At the same time, we found that transimittance of Zn S: Cu film was higher than Zn S/Cu multilayer at 300nm-600 nm. |
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