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Study On Application Of Cu3N Film And Preparation Of 3d Transition Metal Doped Cu3N Films

Posted on:2016-11-21Degree:MasterType:Thesis
Country:ChinaCandidate:J B YangFull Text:PDF
GTID:2271330473965277Subject:Optics
Abstract/Summary:PDF Full Text Request
The dark green-colored copper nitride(Cu3N) crystallizes agree with the typical a cubic anti-ReO3 structure, in which the copper atoms are positioned at the middle of the edges to form collinear bonds with the two nearest neighbor N atoms. Cu3 N is a metastable state with low decomposition temperature(300℃). There are many vacant sites in the structure where can be interposed by other elements. This feature will lead to a potential research that may cause obvious changes in the optical and electrical properties of Cu3 N.This paper has investigated V-, Fe-, Co-, Ni-doped(3d transition metal) Cu3 N film which prepared on silicon substrate by RF magnetron sputtering. The crystal structure, surface morphology, optical and thermal properties, resistivity and mechanical properties were characterized. Moreover, the applications has been explored in integrated circuit’s field based on Cu3 N. The result as follows:The concentration of doping elements must have a upper bound which will far below the theoretical value(20%) in the Cu3 N film. The vanadium’s(V) upper bound value is between 1.3% and 1.85%. With the concentration of V increasing in the Cu3 N film, the film’s preferential growth orientation changed from(111) to(100), the graces are smaller and smaller, the surface of the films are smoother and smoother and the resistivity decreased rapidly. Moreover, the optical and mechanical properties would be better when V doped in the Cu3 N film. At the same time, there are some relationships between the changes of doped Cu3 N films and the electron distribution of the doped elements which know by comparing the pure Cu3 N film with Fe-, Co-, Ni-doped Cu3 N films. It’s more interesting that the Ni-doped samples seems to have fluorescence.Base on the Cu3 N film’s thermal and electrical properties, the integrated circuit plates are designed based on Cu3 N film. These designs have many advantages. Such as easy manufacture, low cost, easy to realize automatic production, environmental friendly and so on.
Keywords/Search Tags:Cu3N, Cu3N film, magnetron sputtering, 3d transition metal, integrated circuit
PDF Full Text Request
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